caa a22 4500 445372230 CHVBK 20180317142951.0 cr unu---uuuuu 170323e20110301xx s 000 0 eng 10.1007/s00340-011-4402-x doi (NATIONALLICENCE)springer-10.1007/s00340-011-4402-x Single photon emitters based on Ni/Si related defects in single crystalline diamond [Elektronische Daten] [D. Steinmetz, E. Neu, J. Meijer, W. Bolse, C. Becher] We present investigations on single Ni/Si related color centers produced via ion implantation into single crystalline type IIa CVD diamond. By testing different ion dose combinations we show that there is an upper limit for both the Ni and the Si dose (1012 cm−2 and 1010 cm−2 resp.) due to the creation of excess fluorescent background. We demonstrate creation of Ni/Si related centers showing emission in the spectral range between 767nm and 775nm and narrow line-widths of ≈2nm FWHM at room temperature. Measurements of the intensity autocorrelation functions prove single-photon emission. The investigated color centers can be coarsely divided into two groups: Drawing from photon statistics and the degree of polarization in excitation and emission, we find that some color centers behave as two-level, single-dipole systems whereas other centers exhibit three levels and contributions from two orthogonal dipoles. In addition, some color centers feature stable and bright emission with saturation count rates up to 78kcounts/s whereas others show fluctuating count rates and three-level blinking. Springer-Verlag, 2011 Steinmetz D. Fachrichtung 7.3 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123, Saarbrücken, Germany aut Neu E. Fachrichtung 7.3 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123, Saarbrücken, Germany aut Meijer J. RUBION, Ruhr-Universität Bochum, Universitätsstraße 150, 44801, Bochum, Germany aut Bolse W. Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Pfaffenwaldring 31, 70569, Stuttgart, Germany aut Becher C. Fachrichtung 7.3 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123, Saarbrücken, Germany aut Applied Physics B Springer-Verlag 102/3(2011-03-01), 451-458 0946-2171 102:3<451 2011 102 340 https://doi.org/10.1007/s00340-011-4402-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-011-4402-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Steinmetz D. Fachrichtung 7.3 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123, Saarbrücken, Germany aut NATIONALLICENCE 700 1- Neu E. Fachrichtung 7.3 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123, Saarbrücken, Germany aut NATIONALLICENCE 700 1- Meijer J. RUBION, Ruhr-Universität Bochum, Universitätsstraße 150, 44801, Bochum, Germany aut NATIONALLICENCE 700 1- Bolse W. Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Pfaffenwaldring 31, 70569, Stuttgart, Germany aut NATIONALLICENCE 700 1- Becher C. Fachrichtung 7.3 (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123, Saarbrücken, Germany aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 102/3(2011-03-01), 451-458 0946-2171 102:3<451 2011 102 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer