caa a22 4500 445372362 CHVBK 20180317142951.0 cr unu---uuuuu 170323e20110301xx s 000 0 eng 10.1007/s00340-010-4234-0 doi (NATIONALLICENCE)springer-10.1007/s00340-010-4234-0 Ultra-low dark count rate and high system efficiency single-photon detectors with 50nm-wide superconducting wires [Elektronische Daten] [L. Zhang, L. Kang, J. Chen, Y. Zhong, Q. Zhao, T. Jia, C. Cao, B. Jin, W. Xu, G. Sun, P. Wu] Both system detection efficiency (DE) and dark count rate (DCR) are critical parameters of single-photon detectors for practical applications. For a superconducting nanowire single-photon detector (SNSPD), DE is always achieved with high bias current, which also produces high dark count rate. In this paper, we analyzed the DE of SNSPD with 50 nm NbN nanowires patterned on the films with a thickness of 4 and 6 nm. The maximum DE for communication wavelengths is 10.3% at 1310 nm with a 50nm-wide and 4 nm-thick device. The chip with 6 nm thickness shows high DE at ultra-low dark count rate. For example, DEs of 32% for 404 nm photons and 21% for 660 nm photons were achieved at a low dark count rate of 0.01Hz. Comparing with the SNSPD with 4 nm-thick films, the improved DE for visible photons with the 6 nm-thick SNSPD is caused by the increased absorbance of NbN films, which also reduced the dark count rate produced by thermal activation around film defects. By optimizing the micro-fabrication process and further decreasing the nanowire width while retaining uniformity, the wavelength response of the 6 nm-thick SNSPD may be extended to infrared photons. Springer-Verlag, 2010 Zhang L. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut Kang L. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut Chen J. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut Zhong Y. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut Zhao Q. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut Jia T. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut Cao C. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut Jin B. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut Xu W. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut Sun G. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut Wu P. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut Applied Physics B Springer-Verlag 102/4(2011-03-01), 867-871 0946-2171 102:4<867 2011 102 340 https://doi.org/10.1007/s00340-010-4234-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-010-4234-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhang L. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Kang L. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Chen J. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Zhong Y. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Zhao Q. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Jia T. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Cao C. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Jin B. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Xu W. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Sun G. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Wu P. Research Institute of Superconductor Electronics (RISE), Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 102/4(2011-03-01), 867-871 0946-2171 102:4<867 2011 102 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer