caa a22 4500 445372389 CHVBK 20180317142951.0 cr unu---uuuuu 170323e20110301xx s 000 0 eng 10.1007/s00340-010-4257-6 doi (NATIONALLICENCE)springer-10.1007/s00340-010-4257-6 Dual-wavelength passively mode-locked Nd: GdVO4laserwithorthogonal polarizations [Elektronische Daten] [W. Tan, D. Tang, C. Xu, J. Zhang, H. Yu, H. Zhang] A passively mode-locked dual-wavelength Nd: GdVO4 laser with orthogonal polarizations is experimentally demonstrated. By changing the absorbed pump power, the laser can mode lock either at 1063nm (with π polarization) or 1065 nm (with σ polarization), or simultaneously at both wavelengths with orthogonal polarizations. When mode locked at 1063 nm and 1065nm, the laser produced pulses of 10ps and 5.9ps, respectively, with repetition rates of 143.7MHz and 143.9MHz. When simultaneously mode locked at both wavelengths, the pulsewidth was about7ps. The laser was demonstrated by exploiting the thermal lens and birefringence of the Nd: GdVO4 crystal. The laser uses one cavity and does not require the insertion of additional optical components. Springer-Verlag, 2010 Tan W. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore aut Tang D. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore aut Xu C. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore aut Zhang J. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore aut Yu H. State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, 250100, Jinan, China aut Zhang H. State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, 250100, Jinan, China aut Applied Physics B Springer-Verlag 102/4(2011-03-01), 775-779 0946-2171 102:4<775 2011 102 340 https://doi.org/10.1007/s00340-010-4257-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00340-010-4257-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Tan W. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore aut NATIONALLICENCE 700 1- Tang D. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore aut NATIONALLICENCE 700 1- Xu C. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore aut NATIONALLICENCE 700 1- Zhang J. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore, Singapore aut NATIONALLICENCE 700 1- Yu H. State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, 250100, Jinan, China aut NATIONALLICENCE 700 1- Zhang H. State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, 250100, Jinan, China aut NATIONALLICENCE 773 0- Applied Physics B Springer-Verlag 102/4(2011-03-01), 775-779 0946-2171 102:4<775 2011 102 340 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer