caa a22 4500 445379898 CHVBK 20180317143014.0 cr unu---uuuuu 170323e20110801xx s 000 0 eng 10.1007/s10948-011-1138-0 doi (NATIONALLICENCE)springer-10.1007/s10948-011-1138-0 Control of Spin-Valley Current in Strain-Engineered Graphene Magnetic Junction [Elektronische Daten] [Bumned Soodchomshom, Peerasak Chantngarm] We investigate the spin-valley current in a strain-engineered graphene magnetic system, normal region (N)/strain region(S)/ferromagnetic region (F)/normal region (N) junction. Locally strained region S leads to valley-dependent current, and ferromagnetic region F leads to the spin-dependent current. We find that pure valley current can be created easily by applying the real-vector potential that is equal to the pseudo-vector potential caused by strains in the S-region. In this work, we focus on the spin current in each valley when exchange field is applied in the F-region, and find that the linear control of spin-valley polarization by gate potential is possible. It is also found that when the current is carried only by the carriers in one valley (pure valley current), pure spin-up current can be linearly altered to pure spin-down current by tuning the gate potential, in the case of very large-F-thickness junction. Our work is applicable for devising controllable spin-valley-current electronics circuits. Springer Science+Business Media, LLC, 2011 Strained graphene nationallicence Pseudo-magnetic field nationallicence Valley filter nationallicence Spintronics nationallicence Soodchomshom Bumned Thailand Center of Excellence in Physics, Commission Higher on Education, Ministry of Education, 10400, Bangkok, Thailand aut Chantngarm Peerasak Department of Electronics and Telecommunication Engineering, Faculty of Engineering, Pathumwan Institute of Technology, 10330, Bangkok, Thailand aut Journal of Superconductivity and Novel Magnetism Springer US; http://www.springer-ny.com 24/6(2011-08-01), 1885-1892 1557-1939 24:6<1885 2011 24 10948 https://doi.org/10.1007/s10948-011-1138-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10948-011-1138-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Soodchomshom Bumned Thailand Center of Excellence in Physics, Commission Higher on Education, Ministry of Education, 10400, Bangkok, Thailand aut NATIONALLICENCE 700 1- Chantngarm Peerasak Department of Electronics and Telecommunication Engineering, Faculty of Engineering, Pathumwan Institute of Technology, 10330, Bangkok, Thailand aut NATIONALLICENCE 773 0- Journal of Superconductivity and Novel Magnetism Springer US; http://www.springer-ny.com 24/6(2011-08-01), 1885-1892 1557-1939 24:6<1885 2011 24 10948 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer