caa a22 4500 445380098 CHVBK 20180317143014.0 cr unu---uuuuu 170323e20111001xx s 000 0 eng 10.1007/s10948-011-1165-x doi (NATIONALLICENCE)springer-10.1007/s10948-011-1165-x Metastable Giant Moments in Gd-Implanted GaN, Si, and Sapphire [Elektronische Daten] [X. Wang, C. Timm, X. Wang, W. Chu, J. Lin, H. Jiang, J. Wu] We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800μ B , while the moments in Gd-implanted Si and sapphire were only slightly smaller. The apparent induced ferromagnetic response was found to be metastable, disappearing after on the order of 50 days at room temperature, except for the implanted sapphire. We argue that our findings support a defect-based picture of magnetism in Gd-implanted semiconductors and insulators. Springer Science+Business Media, LLC, 2011 Gd ion implantation nationallicence Metastable giant moments nationallicence Wang X. Department of Pharmaceutical Chemistry, University of Kansas, Lawrence, USA aut Timm C. Institute of Theoretical Physics, Technische Universtät Dresden, 01062, Dresden, Germany aut Wang X. Department of Physics, University of Houston, Houston, USA aut Chu W. Department of Physics, University of Houston, Houston, USA aut Lin J. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, USA aut Jiang H. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, USA aut Wu J. Department of Physics and Astronomy, University of Kansas, Lawrence, USA aut Journal of Superconductivity and Novel Magnetism Springer US; http://www.springer-ny.com 24/7(2011-10-01), 2123-2128 1557-1939 24:7<2123 2011 24 10948 https://doi.org/10.1007/s10948-011-1165-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10948-011-1165-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang X. Department of Pharmaceutical Chemistry, University of Kansas, Lawrence, USA aut NATIONALLICENCE 700 1- Timm C. Institute of Theoretical Physics, Technische Universtät Dresden, 01062, Dresden, Germany aut NATIONALLICENCE 700 1- Wang X. Department of Physics, University of Houston, Houston, USA aut NATIONALLICENCE 700 1- Chu W. Department of Physics, University of Houston, Houston, USA aut NATIONALLICENCE 700 1- Lin J. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, USA aut NATIONALLICENCE 700 1- Jiang H. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, USA aut NATIONALLICENCE 700 1- Wu J. Department of Physics and Astronomy, University of Kansas, Lawrence, USA aut NATIONALLICENCE 773 0- Journal of Superconductivity and Novel Magnetism Springer US; http://www.springer-ny.com 24/7(2011-10-01), 2123-2128 1557-1939 24:7<2123 2011 24 10948 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer