caa a22 4500 445820462 CHVBK 20180317145242.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10825-011-0373-8 doi (NATIONALLICENCE)springer-10.1007/s10825-011-0373-8 A two-dimensional analytical model of subthreshold behavior to study the scaling capability of deep submicron double-gate GaN-MESFETs [Elektronische Daten] [N. Lakhdar, F. Djeffal] In this paper, a new deep submicron double-gate (DG) Gallium Nitride (GaN)-MESFET design and its 2-D analytical model have been proposed, investigated and expected to suppress the short-channel-effects (SCEs) and improve the subthreshold behavior for deep submicron GaN-MESFET-based applications. The model predicts that the threshold voltage roll-off, DIBL effects and the subthreshold swing are greatly improved in comparison with the conventional Single-Gate (SG) GaN-MESFETs. The developed approaches are verified and validated by the good agreement found with the 2D numerical simulations for wide range of device parameters and bias conditions. DG GaN-MESFET can alleviate the critical problem and further improve the immunity of SCEs of deep submicron GaN-MESFET-based circuit for future power switching and digital gate devices. Springer Science+Business Media LLC, 2011 Submicron nationallicence Subthreshold nationallicence Short-channel-effects nationallicence DG GaN-MESFET nationallicence Modeling nationallicence Lakhdar N. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut Djeffal F. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/4(2011-12-01), 382-387 1569-8025 10:4<382 2011 10 10825 https://doi.org/10.1007/s10825-011-0373-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10825-011-0373-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lakhdar N. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut NATIONALLICENCE 700 1- Djeffal F. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut NATIONALLICENCE 773 0- Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/4(2011-12-01), 382-387 1569-8025 10:4<382 2011 10 10825 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer