caa a22 4500 445820489 CHVBK 20180317145242.0 cr unu---uuuuu 170323e20111201xx s 000 0 eng 10.1007/s10825-011-0378-3 doi (NATIONALLICENCE)springer-10.1007/s10825-011-0378-3 Modeling of some electrical parameters of a MOSFET under applied uniaxial stress [Elektronische Daten] [Amit Chaudhry, Sonu Sangwan, Jatindra Roy] A semi analytical model describing the bulk mobility for electrons in strained-Si layers as a function of applied uniaxial strain applied at the gate has been developed in this paper. The uniaxial stress has been applied through the silicon nitride cap layer. The effects of uniaxial stress are understood on all the three components of mobility i.e. phonon, columbic and surface roughness mobility. The results show that the electron mobility is a strong rising function of applied uniaxial strain. Flatband voltage, Depletion Charge density, Inversion charge density, Energy gap and Effective surface electrical field have been analytically modeled. There is a sharp increase in the vertical electrical field and inversion charge density and decrease in the energy gap, depletion charge density and the flatband voltage when the uniaxial stress is applied. The electron mobility results have also been compared with the experimentally reported results and show good agreement. Springer Science+Business Media LLC, 2011 Mobility nationallicence Strained-Si nationallicence Model nationallicence Experimental nationallicence Chaudhry Amit University Institute of Engineering and Technology, Panjab University, Chandigarh, India aut Sangwan Sonu University Institute of Engineering and Technology, Panjab University, Chandigarh, India aut Roy Jatindra Solar Semiconductor Private Limited, Hyderabad, India aut Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/4(2011-12-01), 437-442 1569-8025 10:4<437 2011 10 10825 https://doi.org/10.1007/s10825-011-0378-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10825-011-0378-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chaudhry Amit University Institute of Engineering and Technology, Panjab University, Chandigarh, India aut NATIONALLICENCE 700 1- Sangwan Sonu University Institute of Engineering and Technology, Panjab University, Chandigarh, India aut NATIONALLICENCE 700 1- Roy Jatindra Solar Semiconductor Private Limited, Hyderabad, India aut NATIONALLICENCE 773 0- Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/4(2011-12-01), 437-442 1569-8025 10:4<437 2011 10 10825 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer