caa a22 4500 44582056X CHVBK 20180317145242.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10825-010-0310-2 doi (NATIONALLICENCE)springer-10.1007/s10825-010-0310-2 Characterization of defect density created by stress in the gate todrain overlap region using GIDL current model in n-channel MOSFET [Elektronische Daten] [N. Maouhoub, K. Rais] In this paper we study the impact of stress on gate induced drain leakage (GIDL) current variations in MOS transistors, which manifested by tunneling in the gate to drain overlap region. The oxide thickness of n-channel transistor used is 8.5nm. We show that this phenomenon is accentuated in high stress accumulation V g=−3V, V d=3V, but more less for stress V g=V d=3V. In both cases, any constraint corresponds to an increase in accumulated charges in the transistor and hence the current GIDL. Springer Science+Business Media LLC, 2010 MOS transistor nationallicence Tunneling band to band nationallicence GIDL nationallicence Stress nationallicence Defect density nationallicence Maouhoub N. Laboratoire d'électronique, d'instrumentation et de traitement du signal, Equipe de caractérisation des composants à semi-conducteurs, faculté des sciences, Université Chouaib Doukkali, B.P. 20, EL Jadida, Maroc aut Rais K. Laboratoire d'électronique, d'instrumentation et de traitement du signal, Equipe de caractérisation des composants à semi-conducteurs, faculté des sciences, Université Chouaib Doukkali, B.P. 20, EL Jadida, Maroc aut Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 141-143 1569-8025 10:1-2<141 2011 10 10825 https://doi.org/10.1007/s10825-010-0310-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10825-010-0310-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Maouhoub N. Laboratoire d'électronique, d'instrumentation et de traitement du signal, Equipe de caractérisation des composants à semi-conducteurs, faculté des sciences, Université Chouaib Doukkali, B.P. 20, EL Jadida, Maroc aut NATIONALLICENCE 700 1- Rais K. Laboratoire d'électronique, d'instrumentation et de traitement du signal, Equipe de caractérisation des composants à semi-conducteurs, faculté des sciences, Université Chouaib Doukkali, B.P. 20, EL Jadida, Maroc aut NATIONALLICENCE 773 0- Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 141-143 1569-8025 10:1-2<141 2011 10 10825 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer