caa a22 4500 445820578 CHVBK 20180317145242.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10825-011-0362-y doi (NATIONALLICENCE)springer-10.1007/s10825-011-0362-y Piezoresistive effect in p-type silicon classical nanowires at high uniaxial strains [Elektronische Daten] [S. Kozlovskiy, N. Sharan] The longitudinal piezoresistance of the p-type silicon nanowires oriented along the 〈100〉, 〈110〉 and 〈111〉 crystallographic directions is examined at high uniaxial compressive and tensile elastic stresses ∼1GPa. The detail research on base of the six-band model of the valence band involves quantum kinetic approach to calculation of the kinetic coefficients (conductivity, mobility) in classical nanowires with diameter that is significant higher the de Broglie wavelength of the band carriers. Two mechanisms of scattering (charged impurities and longitudinal acoustic phonons) are investigated. Qualitative agreement has been reached between calculated and known experimental data. A quantitative agreement with experiment is obtained in assumption about a formation of the stress concentration (stress raisers) in regions of nanowires that are depleted by the band carriers. Springer Science+Business Media LLC, 2011 Longitudinal piezoresistance nationallicence p-type silicon nanowire nationallicence High uniaxial strain nationallicence Stress raiser nationallicence Kozlovskiy S. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauki, 03028, Kyiv, Ukraine aut Sharan N. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauki, 03028, Kyiv, Ukraine aut Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 258-267 1569-8025 10:1-2<258 2011 10 10825 https://doi.org/10.1007/s10825-011-0362-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10825-011-0362-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kozlovskiy S. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauki, 03028, Kyiv, Ukraine aut NATIONALLICENCE 700 1- Sharan N. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauki, 03028, Kyiv, Ukraine aut NATIONALLICENCE 773 0- Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 258-267 1569-8025 10:1-2<258 2011 10 10825 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer