caa a22 4500 445820616 CHVBK 20180317145243.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10825-010-0311-1 doi (NATIONALLICENCE)springer-10.1007/s10825-010-0311-1 Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors [Elektronische Daten] [W. Wondmagegn, N. Satyala, R. Pieper, M. Quevedo-Lopez, S. Gowrisanker, H. Alshareef, H. Stiegler, B. Gnade] The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 kΩcm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4kΩcm, which is about half of the experimentally extracted 108kΩcm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1MHz switching frequency for a 1μm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5MHz. Springer Science+Business Media LLC, 2010 Contact resistance nationallicence Pentacene nationallicence Interface dipole nationallicence Switching speed nationallicence Organic thinfilm transistor nationallicence Poole-Frenkel mechanism nationallicence Field effect mobility nationallicence Wondmagegn W. Department of Electrical Engineering, University of Texas at Tyler, 75799, Tyler, TX, USA aut Satyala N. Department of Electrical Engineering, University of Texas at Tyler, 75799, Tyler, TX, USA aut Pieper R. Department of Electrical Engineering, University of Texas at Tyler, 75799, Tyler, TX, USA aut Quevedo-Lopez M. Department of Materials Science & Engineering, University of Texas at Dallas, 75080-3021, Richardson, TX, USA aut Gowrisanker S. Department of Materials Science & Engineering, University of Texas at Dallas, 75080-3021, Richardson, TX, USA aut Alshareef H. Department of Materials Science & Engineering, King Abdullah University of Science & Technology, 23955-6900, Thuwal, Kingdom of Saudi Arabia aut Stiegler H. Department of Materials Science & Engineering, University of Texas at Dallas, 75080-3021, Richardson, TX, USA aut Gnade B. Department of Materials Science & Engineering, University of Texas at Dallas, 75080-3021, Richardson, TX, USA aut Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 144-153 1569-8025 10:1-2<144 2011 10 10825 https://doi.org/10.1007/s10825-010-0311-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10825-010-0311-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wondmagegn W. Department of Electrical Engineering, University of Texas at Tyler, 75799, Tyler, TX, USA aut NATIONALLICENCE 700 1- Satyala N. Department of Electrical Engineering, University of Texas at Tyler, 75799, Tyler, TX, USA aut NATIONALLICENCE 700 1- Pieper R. Department of Electrical Engineering, University of Texas at Tyler, 75799, Tyler, TX, USA aut NATIONALLICENCE 700 1- Quevedo-Lopez M. Department of Materials Science & Engineering, University of Texas at Dallas, 75080-3021, Richardson, TX, USA aut NATIONALLICENCE 700 1- Gowrisanker S. Department of Materials Science & Engineering, University of Texas at Dallas, 75080-3021, Richardson, TX, USA aut NATIONALLICENCE 700 1- Alshareef H. Department of Materials Science & Engineering, King Abdullah University of Science & Technology, 23955-6900, Thuwal, Kingdom of Saudi Arabia aut NATIONALLICENCE 700 1- Stiegler H. Department of Materials Science & Engineering, University of Texas at Dallas, 75080-3021, Richardson, TX, USA aut NATIONALLICENCE 700 1- Gnade B. Department of Materials Science & Engineering, University of Texas at Dallas, 75080-3021, Richardson, TX, USA aut NATIONALLICENCE 773 0- Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 144-153 1569-8025 10:1-2<144 2011 10 10825 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer