caa a22 4500 445820632 CHVBK 20180317145243.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10825-011-0361-z doi (NATIONALLICENCE)springer-10.1007/s10825-011-0361-z Hybrid numerical analysis of a high-speed non-volatile suspended gate silicon nanodot memory (SGSNM) [Elektronische Daten] [Mario García-Ramírez, Yoshishige Tsuchiya, Hiroshi Mizuta] We present a hybrid numerical analysis of a high-speed and non-volatile suspended gate silicon nanodot memory (SGSNM) which co-integrates a nano-electromechanical (NEM) control gate with a MOSFET as a readout element and silicon nanodots as a floating gate. A hybrid NEM-MOS circuit simulation is developed by taking account of the pull-in/pull-out operation of the suspended gate and electron tunnelling processes through the tunnel oxide layer as behavioural models. The signals for programming, erasing and reading are successfully achieved at circuit level simulation. The programming and erasing times are found as short as 2.5 nsec for a SGSNM with a 1-μm-long suspended gate, which is a summation of the mechanical pull-in/pull-out times and the tunnel charging/discharging times. Springer Science+Business Media LLC, 2011 Non-volatile memory nationallicence Nano electromechanical Systems (NEMS) nationallicence Suspended gate structure nationallicence Hybrid circuit simulation nationallicence Electron tunelling process nationallicence García-Ramírez Mario Nano Group, School of Electronics and Computer Science, University of Southampton, SO17 1BJ, Southampton, UK aut Tsuchiya Yoshishige Nano Group, School of Electronics and Computer Science, University of Southampton, SO17 1BJ, Southampton, UK aut Mizuta Hiroshi Nano Group, School of Electronics and Computer Science, University of Southampton, SO17 1BJ, Southampton, UK aut Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 248-257 1569-8025 10:1-2<248 2011 10 10825 https://doi.org/10.1007/s10825-011-0361-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10825-011-0361-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- García-Ramírez Mario Nano Group, School of Electronics and Computer Science, University of Southampton, SO17 1BJ, Southampton, UK aut NATIONALLICENCE 700 1- Tsuchiya Yoshishige Nano Group, School of Electronics and Computer Science, University of Southampton, SO17 1BJ, Southampton, UK aut NATIONALLICENCE 700 1- Mizuta Hiroshi Nano Group, School of Electronics and Computer Science, University of Southampton, SO17 1BJ, Southampton, UK aut NATIONALLICENCE 773 0- Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 248-257 1569-8025 10:1-2<248 2011 10 10825 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer