caa a22 4500 445820667 CHVBK 20180317145243.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10825-011-0357-8 doi (NATIONALLICENCE)springer-10.1007/s10825-011-0357-8 Gate leakage behavior of source/drain-to-gate non-overlapped MOSFET structure [Elektronische Daten] [Ashwani Rana, Narottam Chand, Vinod Kapoor] In this paper, novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure has been demonstrated to reduce the gate leakage current for the first time. The gate leakage behavior of novel MOSFET structure has been investigated with help of compact analytical model and Sentaurus Simulation. Fringing gate electric field through the dielectric spacer induces inversion layer in the non-overlap region to act as extended source/drain region. It is found that optimal source/drain-to-gate non-overlapped and high-k spacer structure has reduced the gate leakage current to great extent as compared to those of an overlapped structure. Further, the proposed structure had improved off current, subthreshold slope and drain induced barrier lowering characteristic with a slight degradation in source/drain series resistance and effective gate capacitance. Springer Science+Business Media LLC, 2011 Gate tunneling current nationallicence Analytical model nationallicence Spacer dielectrics nationallicence Drain induced barrier lowering nationallicence Subthreshold slope nationallicence Rana Ashwani Department of Electronics and Communication, National Institute of Technology, 177005, Hamirpur Hamirpur, India aut Chand Narottam Department of Computer Science and Engineering, National Institute of Technology, 177005, Hamirpur Hamirpur, India aut Kapoor Vinod Department of Electronics and Communication, National Institute of Technology, 177005, Hamirpur Hamirpur, India aut Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 222-228 1569-8025 10:1-2<222 2011 10 10825 https://doi.org/10.1007/s10825-011-0357-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10825-011-0357-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rana Ashwani Department of Electronics and Communication, National Institute of Technology, 177005, Hamirpur Hamirpur, India aut NATIONALLICENCE 700 1- Chand Narottam Department of Computer Science and Engineering, National Institute of Technology, 177005, Hamirpur Hamirpur, India aut NATIONALLICENCE 700 1- Kapoor Vinod Department of Electronics and Communication, National Institute of Technology, 177005, Hamirpur Hamirpur, India aut NATIONALLICENCE 773 0- Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 222-228 1569-8025 10:1-2<222 2011 10 10825 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer