caa a22 4500 445820675 CHVBK 20180317145243.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10825-011-0354-y doi (NATIONALLICENCE)springer-10.1007/s10825-011-0354-y Unification of MOS compact models with the unified regional modeling approach [Elektronische Daten] [Xing Zhou, Guojun Zhu, Guan See, Karthik Chandrasekaran, Siau Chiah, Khee Lim] This paper reviews the development of the MOSFET model (Xsim), for unification of various types of MOS devices, such as bulk, partially/fully-depleted SOI, double-gate (DG) FinFETs and gate-all-around (GAA) silicon-nanowires (SiNWs), based on the unified regional modeling (URM) approach. The complete scaling of body doping and thickness with seamless transitions from one structure to another is achieved with the unified regional surface potential, in which other effects (such as those due to poly-gate doping and quantum-mechanical) can be incorporated. The unique features of the Xsim model and the essence of the URM approach are described. Springer Science+Business Media LLC, 2011 Compact model nationallicence MOSFET nationallicence Xsim nationallicence Zhou Xing School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Republic of Singapore aut Zhu Guojun Systems on Silicon Manufacturing Co. Pte. Ltd., 70 Pasir Ris Industrial Drive 1, 519527, Singapore, Singapore aut See Guan GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2, 738406, Singapore, Singapore aut Chandrasekaran Karthik GLOBALFOUNDRIES, 2070 Route 52, 12533, Hopewell Junction, NY, USA aut Chiah Siau ITE College Central, 20 Yishun Avenue 9, 768892, Singapore, Singapore aut Lim Khee GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2, 738406, Singapore, Singapore aut Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 121-135 1569-8025 10:1-2<121 2011 10 10825 https://doi.org/10.1007/s10825-011-0354-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10825-011-0354-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhou Xing School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Republic of Singapore aut NATIONALLICENCE 700 1- Zhu Guojun Systems on Silicon Manufacturing Co. Pte. Ltd., 70 Pasir Ris Industrial Drive 1, 519527, Singapore, Singapore aut NATIONALLICENCE 700 1- See Guan GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2, 738406, Singapore, Singapore aut NATIONALLICENCE 700 1- Chandrasekaran Karthik GLOBALFOUNDRIES, 2070 Route 52, 12533, Hopewell Junction, NY, USA aut NATIONALLICENCE 700 1- Chiah Siau ITE College Central, 20 Yishun Avenue 9, 768892, Singapore, Singapore aut NATIONALLICENCE 700 1- Lim Khee GLOBALFOUNDRIES Singapore Pte. Ltd., 60 Woodlands Industrial Park D Street 2, 738406, Singapore, Singapore aut NATIONALLICENCE 773 0- Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 121-135 1569-8025 10:1-2<121 2011 10 10825 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer