caa a22 4500 445820756 CHVBK 20180317145243.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10825-010-0329-4 doi (NATIONALLICENCE)springer-10.1007/s10825-010-0329-4 A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs [Elektronische Daten] [M. Abdi, F. Djeffal, Z. Dibi, D. Arar] The Gate All Around (GAA) MOSFET is considered as one of the most promising devices for downscaling below 50nm. By surrounding the channel completely, the gate gains increased electrostatic control of the channel and short-channel-effects (SCEs) can be drastically suppressed. However, challenges still remain to resolve the important issues particularly concerning hot-carrier reliability and accurate device models for nanoscale circuit designs. Hot-carrier effects have been the major issues in the long-term stability of subthreshold performances in a nanoscale MOS transistor. In this paper we present a two-dimensional analytical analysis of the subthreshold behavior, subthreshold current and subthreshold swing, including the interfacial hot-carrier effects. The calculated results of the proposed approach match well with those of the 2-D numerical device simulator. The present work provides valuable design insights in the performance of nanoscale CMOS-based devices including hot-carrier degradation effects. Springer Science+Business Media LLC, 2010 Nanoscale nationallicence MOSFET nationallicence Hot-carrier nationallicence Degradation nationallicence Subthreshold current nationallicence Abdi M. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut Djeffal F. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut Dibi Z. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut Arar D. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 179-185 1569-8025 10:1-2<179 2011 10 10825 https://doi.org/10.1007/s10825-010-0329-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10825-010-0329-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Abdi M. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut NATIONALLICENCE 700 1- Djeffal F. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut NATIONALLICENCE 700 1- Dibi Z. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut NATIONALLICENCE 700 1- Arar D. LEA, Department of Electronics, University of Batna, 05000, Batna, Algeria aut NATIONALLICENCE 773 0- Journal of Computational Electronics Springer US; http://www.springer-ny.com 10/1-2(2011-06-01), 179-185 1569-8025 10:1-2<179 2011 10 10825 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer