caa a22 4500 445826282 CHVBK 20180317145300.0 cr unu---uuuuu 170323e20110101xx s 000 0 eng 10.1007/s10854-010-0081-3 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0081-3 Phase-change characteristics of nitrogen-doped Ge2Sb2Te5 films during annealing process [Elektronische Daten] [Ki-Hong Kim, Jae-Gwan Chung, Yong Kyoung, Ju-Cheol Park, Sang-Jun Choi] The microstructures and electrical properties of nitrogen-doped Ge2Sb2Te5 thermally annealed in an N2 atmosphere were investigated. The 5.4% nitrogen-doped Ge2Sb2Te5 thin films showed discontinuous changes in resistance with annealing temperature, and corresponding changes in crystal structure. The phase transitions went through three states, amorphous→cubic→hexagonal, after annealing at 200 and 375°C. No chemical compositional change occurred after 400°C annealing. But the 20.1% nitrogen-doped Ge2Sb2Te5 thin films showed continuous changes in microstructure and resistance. According to XRD and TEM analyses, the hexagonal-type Ge-Sb-Te phase should be directly crystallized from the amorphous phase. Also, the SIMS and XPS spectra indicate that the oxygen in-diffusion and Sb and Te out-diffusion should have occurred simultaneously. Springer Science+Business Media, LLC, 2010 Kim Ki-Hong AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltds, 446-712, Yongin, Republic of Korea aut Chung Jae-Gwan AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltds, 446-712, Yongin, Republic of Korea aut Kyoung Yong AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltds, 446-712, Yongin, Republic of Korea aut Park Ju-Cheol Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co. Ltd, 446-712, Yongin, Republic of Korea aut Choi Sang-Jun Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co. Ltd, 446-712, Yongin, Republic of Korea aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/1(2011-01-01), 52-55 0957-4522 22:1<52 2011 22 10854 https://doi.org/10.1007/s10854-010-0081-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0081-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Ki-Hong AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltds, 446-712, Yongin, Republic of Korea aut NATIONALLICENCE 700 1- Chung Jae-Gwan AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltds, 446-712, Yongin, Republic of Korea aut NATIONALLICENCE 700 1- Kyoung Yong AE Group, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltds, 446-712, Yongin, Republic of Korea aut NATIONALLICENCE 700 1- Park Ju-Cheol Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co. Ltd, 446-712, Yongin, Republic of Korea aut NATIONALLICENCE 700 1- Choi Sang-Jun Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co. Ltd, 446-712, Yongin, Republic of Korea aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/1(2011-01-01), 52-55 0957-4522 22:1<52 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer