caa a22 4500 445826290 CHVBK 20180317145300.0 cr unu---uuuuu 170323e20110101xx s 000 0 eng 10.1007/s10854-010-0091-1 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0091-1 Microstructure and electrical properties of Pr6O11 doped ZnO-Bi2O3-based varistors [Elektronische Daten] [Jianfeng Zhu, Guoquan Qi, Haibo Yang, Fen Wang] The microstructure and electrical properties of ZnO-Bi2O3-based varistor ceramics doped by Pr6O11 in the content range of 0-5.49 wt% were investigated at different sintering temperatures (1,100, 1,150, 1,175, 1,200°C). The increase of sintering temperature leads to more dense ceramics, which increases the nonlinear property, whereas it decreases the voltage-gradient and leakage current. With increasing Pr6O11 content, the breakdown voltage increases because of the decreases of ZnO grain size. The improvement of non linear coefficient together with the decrease of leakage current are related to the uniformly distribution of secondary phases along the grain boundaries of the ZnO. The varistors sintered at 1,175°C with the 3.37 wt% Pr6O11 doping possess the best electrical properties: the varistor voltage, nonlinear coefficient, and leakage current are 340V/mm, 46 and 0.63μA, respectively. Springer Science+Business Media, LLC, 2010 Zhu Jianfeng Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry, Ministry of Education, Shaanxi University of Science & Technology, 710021, Xi'an, People's Republic of China aut Qi Guoquan Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry, Ministry of Education, Shaanxi University of Science & Technology, 710021, Xi'an, People's Republic of China aut Yang Haibo Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry, Ministry of Education, Shaanxi University of Science & Technology, 710021, Xi'an, People's Republic of China aut Wang Fen Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry, Ministry of Education, Shaanxi University of Science & Technology, 710021, Xi'an, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/1(2011-01-01), 96-100 0957-4522 22:1<96 2011 22 10854 https://doi.org/10.1007/s10854-010-0091-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0091-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhu Jianfeng Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry, Ministry of Education, Shaanxi University of Science & Technology, 710021, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Qi Guoquan Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry, Ministry of Education, Shaanxi University of Science & Technology, 710021, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Yang Haibo Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry, Ministry of Education, Shaanxi University of Science & Technology, 710021, Xi'an, People's Republic of China aut NATIONALLICENCE 700 1- Wang Fen Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry, Ministry of Education, Shaanxi University of Science & Technology, 710021, Xi'an, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/1(2011-01-01), 96-100 0957-4522 22:1<96 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer