<?xml version="1.0" encoding="UTF-8"?>
<collection xmlns="http://www.loc.gov/MARC21/slim">
 <record>
  <leader>     caa a22        4500</leader>
  <controlfield tag="001">445826304</controlfield>
  <controlfield tag="003">CHVBK</controlfield>
  <controlfield tag="005">20180317145300.0</controlfield>
  <controlfield tag="007">cr unu---uuuuu</controlfield>
  <controlfield tag="008">170323e20110101xx      s     000 0 eng  </controlfield>
  <datafield tag="024" ind1="7" ind2="0">
   <subfield code="a">10.1007/s10854-010-0087-x</subfield>
   <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="035" ind1=" " ind2=" ">
   <subfield code="a">(NATIONALLICENCE)springer-10.1007/s10854-010-0087-x</subfield>
  </datafield>
  <datafield tag="245" ind1="0" ind2="0">
   <subfield code="a">Characteristics of pulse electrodeposited PbS thin films</subfield>
   <subfield code="h">[Elektronische Daten]</subfield>
   <subfield code="c">[P. Thirumoorthy, K. Murali]</subfield>
  </datafield>
  <datafield tag="520" ind1="3" ind2=" ">
   <subfield code="a">PbS thin films were deposited for the first time using the pulse electrodeposition technique at different duty cycles in the range of 9 to 50% and at room temperature using lead nitrate and sodium thiosulphate. The thickness of the films increased from 0.5 to 1.0μm with increase of duty cycle. The films were polycrystalline and exhibited cubic structure. The band gap of the films deposited at 50% duty cycle is 0.42eV. The resistivities of the films decreased from 0.9 to 0.5×105ohmcm as the duty cycle increased. Films with grain size in the range of 20 to 35nm were deposited. Films with refractive index varying in the range of 4.45-3.75 with increase of wavelength were obtained. Films with higher photosensitivity and higher detectivity compared to earlier reports were obtained.</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
   <subfield code="a">Springer Science+Business Media, LLC, 2010</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Thirumoorthy</subfield>
   <subfield code="D">P.</subfield>
   <subfield code="u">Department of Electronics, K.S.R.College of Arts and Science, Thiruchengode, Tamil Nadu, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Murali</subfield>
   <subfield code="D">K.</subfield>
   <subfield code="u">Electrochemical Materials Science Division, Central Electrochemical Research Institute, 630006, Karaikudi, Tamil Nadu, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="773" ind1="0" ind2=" ">
   <subfield code="t">Journal of Materials Science: Materials in Electronics</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">22/1(2011-01-01), 72-76</subfield>
   <subfield code="x">0957-4522</subfield>
   <subfield code="q">22:1&lt;72</subfield>
   <subfield code="1">2011</subfield>
   <subfield code="2">22</subfield>
   <subfield code="o">10854</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2="0">
   <subfield code="u">https://doi.org/10.1007/s10854-010-0087-x</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="908" ind1=" " ind2=" ">
   <subfield code="D">1</subfield>
   <subfield code="a">research-article</subfield>
   <subfield code="2">jats</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">856</subfield>
   <subfield code="E">40</subfield>
   <subfield code="u">https://doi.org/10.1007/s10854-010-0087-x</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Thirumoorthy</subfield>
   <subfield code="D">P.</subfield>
   <subfield code="u">Department of Electronics, K.S.R.College of Arts and Science, Thiruchengode, Tamil Nadu, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Murali</subfield>
   <subfield code="D">K.</subfield>
   <subfield code="u">Electrochemical Materials Science Division, Central Electrochemical Research Institute, 630006, Karaikudi, Tamil Nadu, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">773</subfield>
   <subfield code="E">0-</subfield>
   <subfield code="t">Journal of Materials Science: Materials in Electronics</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">22/1(2011-01-01), 72-76</subfield>
   <subfield code="x">0957-4522</subfield>
   <subfield code="q">22:1&lt;72</subfield>
   <subfield code="1">2011</subfield>
   <subfield code="2">22</subfield>
   <subfield code="o">10854</subfield>
  </datafield>
  <datafield tag="900" ind1=" " ind2="7">
   <subfield code="a">Metadata rights reserved</subfield>
   <subfield code="b">Springer special CC-BY-NC licence</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="898" ind1=" " ind2=" ">
   <subfield code="a">BK010053</subfield>
   <subfield code="b">XK010053</subfield>
   <subfield code="c">XK010000</subfield>
  </datafield>
  <datafield tag="949" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="F">NATIONALLICENCE</subfield>
   <subfield code="b">NL-springer</subfield>
  </datafield>
 </record>
</collection>
