caa a22 4500 445826339 CHVBK 20180317145300.0 cr unu---uuuuu 170323e20110101xx s 000 0 eng 10.1007/s10854-010-0080-4 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0080-4 Effect of Mn doping on the dielectric properties of BaTi0.9Sn0.1O3 ceramics [Elektronische Daten] [Chunlin Fu, Jing Yang, Wei Cai, Xiaoling Deng, Liwen Tang] Pure and Mn-doped BaTi0.9Sn0.1O3 ceramics are prepared via the conventional solid state reaction method. The microstructures, dielectric properties, and diffuse transition of BaTi0.9Sn0.1O3 ceramics with 0, 0.2, 1 and 2 at.% Mn have been investigated. The results indicate that manganese ions enter the unit cell maintaining the perovskite structure of solid solution. Grain size of BaTi0.9Sn0.1O3 ceramics sharply decreases after doping MnO2. However, once MnO2 content is more than 0.2 at.%, the average grain size of Mn-doped BaTi0.9Sn0.1O3 ceramics increases with the increasing of MnO2 content. The addition of manganese leads to the increase of the Curie temperature. The diffuseness of the phase transition of Mn-doped BTS ceramics decreases with the increase of Mn content, which may be due to grain size effect. Springer Science+Business Media, LLC, 2010 Fu Chunlin School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut Yang Jing School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut Cai Wei School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut Deng Xiaoling School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut Tang Liwen College of Materials Science and Engineering, Chongqing University of Technology, 400050, Chongqing, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/1(2011-01-01), 47-51 0957-4522 22:1<47 2011 22 10854 https://doi.org/10.1007/s10854-010-0080-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0080-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Fu Chunlin School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut NATIONALLICENCE 700 1- Yang Jing School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut NATIONALLICENCE 700 1- Cai Wei School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut NATIONALLICENCE 700 1- Deng Xiaoling School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 401331, Chongqing, China aut NATIONALLICENCE 700 1- Tang Liwen College of Materials Science and Engineering, Chongqing University of Technology, 400050, Chongqing, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/1(2011-01-01), 47-51 0957-4522 22:1<47 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer