caa a22 4500 445826363 CHVBK 20180317145300.0 cr unu---uuuuu 170323e20110101xx s 000 0 eng 10.1007/s10854-010-0076-0 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0076-0 Effect of high pressure on the metal-dielectric transition and the pseudo-gap temperature range in oxygen deficient YBa2Cu3O7−δ single crystals [Elektronische Daten] [R. Vovk, A. Zavgorodniy, M. Obolenskii, I. Goulatis, A. Chroneos, V. Pinto Simoes] The effect of high hydrostatic pressure on the electric resistance in the ab-plane of the oxygen deficient YBa2Cu3O7−δ single crystals is investigated. It is shown that the pressure induced redistribution of the labile oxygen results in the strengthening of the phase immiscibility in layers. This process is accompanied with structural relaxation and ascending diffusion processes within the volume of the experimental sample. We observe a significant displacement of the temperature range that corresponds to metal-dielectric type transitions and the pseudo-gap realization regime. Springer Science+Business Media, LLC, 2010 Vovk R. Kharkov National University, 4 Svoboda Sq., 61077, Kharkiv, Ukraine aut Zavgorodniy A. Kharkov National University, 4 Svoboda Sq., 61077, Kharkiv, Ukraine aut Obolenskii M. Kharkov National University, 4 Svoboda Sq., 61077, Kharkiv, Ukraine aut Goulatis I. Kharkov National University, 4 Svoboda Sq., 61077, Kharkiv, Ukraine aut Chroneos A. Department of Materials, Imperial College, SW7 2AZ, London, UK aut Pinto Simoes V. IPA_ Instituto Superior Autónomo de Estudos Politécnicos, Rua de Xabregas, 20, 1º, 1900-440, Lisbon, Portugal aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/1(2011-01-01), 20-24 0957-4522 22:1<20 2011 22 10854 https://doi.org/10.1007/s10854-010-0076-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0076-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Vovk R. Kharkov National University, 4 Svoboda Sq., 61077, Kharkiv, Ukraine aut NATIONALLICENCE 700 1- Zavgorodniy A. Kharkov National University, 4 Svoboda Sq., 61077, Kharkiv, Ukraine aut NATIONALLICENCE 700 1- Obolenskii M. Kharkov National University, 4 Svoboda Sq., 61077, Kharkiv, Ukraine aut NATIONALLICENCE 700 1- Goulatis I. Kharkov National University, 4 Svoboda Sq., 61077, Kharkiv, Ukraine aut NATIONALLICENCE 700 1- Chroneos A. Department of Materials, Imperial College, SW7 2AZ, London, UK aut NATIONALLICENCE 700 1- Pinto Simoes V. IPA_ Instituto Superior Autónomo de Estudos Politécnicos, Rua de Xabregas, 20, 1º, 1900-440, Lisbon, Portugal aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/1(2011-01-01), 20-24 0957-4522 22:1<20 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer