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   <subfield code="u">Semiconductor Ceramics Lab., Department of Electrical Engineering, Dongeui University, 614-714, Busan, Korea</subfield>
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   <subfield code="a">Effect of aluminum doping on electrical and dielectric aging behavior against current impulse of ZPCCY-based varistors</subfield>
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   <subfield code="c">[Choon-Woo Nahm]</subfield>
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   <subfield code="a">The electrical and dielectric aging behavior against current impulse (5-1,200 A) in the Zn-Pr-Co-Cr-Y-based varistors was investigated with aluminum doping level (0-0.01mol%). The varistors doped with 0-0.001mol% Al were destroyed at higher current impulse beyond 900 A and the varistors doped with 0.005-0.01mol% Al exhibited high stability against current impulse. The clamp ratio (K) at given current impulse ranges decreased with increasing Al doping level. The varistor doped with 0.01mol% Al exhibited the lowest K value, with 1.65 at a current impulse of 10 A and 2.38 at a current impulse of 1,200 A. The best electrical and dielectric stability against current impulse of 1,200 A was obtained at 0.01mol% Al, where $$\%\Updelta E_{1\;\text{mA/cm}^2} = -3.4\%$$, %Δα=0%, %ΔJ L=−26.3%, %Δε′APP=+3.4%, and %Δtanδ=−7.7%. Conclusively, Al doping level was optimized at 0.01mol% in terms of the surge withstand capability (SWC).</subfield>
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