caa a22 4500 445826452 CHVBK 20180317145300.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10854-010-0183-y doi (NATIONALLICENCE)springer-10.1007/s10854-010-0183-y Shi Feng College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut Effect of annealing time on microstructure and morphology of thin films by sputtering deposition with (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 target [Elektronische Daten] [Feng Shi] The ceramic thin films have been fabricated by radio frequency (RF) magnetron sputtering technique on SiO2 (110) substrates with (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 target, and then the thin films were annealed at 1,150°C for different times at O2 atmosphere. The microstructure and morphology of the thin films were investigated as a function of the annealing times using the X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy techniques. The results show that the microstructure, morphology, and crystallinity of the thin films can be affected by the annealing times significantly. The main phases of the samples are indexed to be Ba0.5Sr0.5Nb2O6 and Ba0.27Sr0.75Nb2O5.78, which are different from component of the (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 target due to the volatilization of ZnO. The crystalline quality of the thin films decreases when the annealing time is shorter or longer than 30min, and the roughness and grain size of the thin films reaches a maximum value when the annealing time is 30min. Springer Science+Business Media, LLC, 2010 Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 596-600 0957-4522 22:6<596 2011 22 10854 https://doi.org/10.1007/s10854-010-0183-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0183-y text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Shi Feng College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 596-600 0957-4522 22:6<596 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer