caa a22 4500 445826487 CHVBK 20180317145300.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10854-010-0189-5 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0189-5 Structural and electrical studies on Bi2VO5.5/Bi4Ti3O12 multilayer thin films [Elektronische Daten] [Neelam Kumari, S. Krupanidhi, K. Varma] The textured multilayer (ML) thin films of bismuth layered ferroelectric (FE) compounds, Bi2VO5.5 (BVO) and Bi4Ti3O12 (BTO) with different individual layer thicknesses were fabricated via pulsed laser deposition technique on Pt(111)/TiO2/SiO2/Si substrates. X-ray diffraction studies confirmed that BVO and BTO retained their respective crystal structures in these multilayer (ML) thin films. The atomic force microscopy and scanning electron microscopy studies showed smooth and dense microstructures. The polarization hysteresis (P-E) studies on a representative (BVBT30) ML thin film at 300K confirmed the remnant polarization (2P r) and coercive field (E c) to be ~20μC/cm2 and 250kV/cm, respectively. The value of P r obtained was greater than that of the single layer thin film of BVO (P r~5.6μC/cm2). The room temperature dielectric constant (εr′) and the loss (D) for BVBT30 ML measured at 100kHz were 170 and 0.01, respectively. The frequency and temperature dependent dielectric constant, impedance, modulus and ac conductivity of these ML thin films were studied as a function of frequency (100Hz-1MHz) in the 25-300 °C temperature range. Two distinct electrical responses were observed in these films, which were attributed to the grain effects at low temperatures and grain boundary effects at higher temperatures. The frequency dependent electrical conductivity was fitted well with the double power law which evidenced two different types of contributions to the conductivity; the low frequency conductivity being due to the short range translational hopping and the high frequency conductivity was due to the localized or reorientational hopping. Springer Science+Business Media, LLC, 2010 Kumari Neelam Materials Research Center, Indian Institute of Science, 560012, Bangalore, India aut Krupanidhi S. Materials Research Center, Indian Institute of Science, 560012, Bangalore, India aut Varma K. Materials Research Center, Indian Institute of Science, 560012, Bangalore, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 639-648 0957-4522 22:6<639 2011 22 10854 https://doi.org/10.1007/s10854-010-0189-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0189-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kumari Neelam Materials Research Center, Indian Institute of Science, 560012, Bangalore, India aut NATIONALLICENCE 700 1- Krupanidhi S. Materials Research Center, Indian Institute of Science, 560012, Bangalore, India aut NATIONALLICENCE 700 1- Varma K. Materials Research Center, Indian Institute of Science, 560012, Bangalore, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 639-648 0957-4522 22:6<639 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer