caa a22 4500 445826495 CHVBK 20180317145300.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10854-010-0193-9 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0193-9 Structure and electrical properties of CuAlO2 thin films derived by sol-gel processing [Elektronische Daten] [Si-Jia Liu, Hua Wang, Ji-Wen Xu, Ming-Fang Ren, Ling Yang, Jin-Hua Ju] CuAlO2 (CAO) thin films were prepared on quartz glass substrates by sol-gel spin-coating method. The effects of annealing temperatures, concentrations of sols and Al/Cu atomic ratios on structure, morphology and electrical properties have been investigated. It was found that CAO film with an Al/Cu atomic ratio of 0.8 approximately and the total metallic ion concentration of 0.7M after heat treatment at 750°C for 3h in argon gas flow of 450mL/min exhibited the lowest room temperature resistivity of 13.5 Ωcm. Springer Science+Business Media, LLC, 2010 Liu Si-Jia Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Wang Hua Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Xu Ji-Wen Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Ren Ming-Fang Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Yang Ling Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Ju Jin-Hua Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 666-671 0957-4522 22:6<666 2011 22 10854 https://doi.org/10.1007/s10854-010-0193-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0193-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Liu Si-Jia Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Wang Hua Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Xu Ji-Wen Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Ren Ming-Fang Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Yang Ling Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Ju Jin-Hua Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 666-671 0957-4522 22:6<666 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer