caa a22 4500 445826525 CHVBK 20180317145300.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10854-010-0181-0 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0181-0 Investigation of forming-gas annealed CeO2 thin film on GaN [Elektronische Daten] [Hock Quah, Kuan Cheong, Zainuriah Hassan, Zainovia Lockman] The effects of post-deposition annealing temperatures (400, 600, 800, and 1,000°C) in forming gas (95% N2+5% H2) ambient on metal-organic decomposed cerium oxide (CeO2) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO2 phase transformation was reported and presence of CeO2, α-Ce2O3, and β-Ga2O3 had been detected, depending on the annealing temperature. As the annealing temperature increased, grain size and microstrains of CeO2 films were, respectively, increased and reduced. Metal-oxide-semiconductor characteristics of the annealed samples were systematically investigated. The highest dielectric breakdown field was perceived by sample annealed at 400°C due to the reduction of semiconductor-oxide interface trap density and effective oxide charge. Springer Science+Business Media, LLC, 2010 Quah Hock Energy Efficient & Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia aut Cheong Kuan Energy Efficient & Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia aut Hassan Zainuriah School of Physics, Universiti Sains Malaysia, 11800, Minden, Pulau Pinang, Malaysia aut Lockman Zainovia Energy Efficient & Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 583-591 0957-4522 22:6<583 2011 22 10854 https://doi.org/10.1007/s10854-010-0181-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0181-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Quah Hock Energy Efficient & Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia aut NATIONALLICENCE 700 1- Cheong Kuan Energy Efficient & Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia aut NATIONALLICENCE 700 1- Hassan Zainuriah School of Physics, Universiti Sains Malaysia, 11800, Minden, Pulau Pinang, Malaysia aut NATIONALLICENCE 700 1- Lockman Zainovia Energy Efficient & Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 583-591 0957-4522 22:6<583 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer