caa a22 4500 445826541 CHVBK 20180317145301.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10854-010-0185-9 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0185-9 Structural, optical and electrical properties of ZnTe1− x Se x thin films [Elektronische Daten] [V. Nagarethinam, M. Ahamed, K. Vijayakumar, L. Amalraj, A. Balu, A. Thayumanavan, K. Murali, C. Sanjeeviraja, M. Jayachandran] ZnTe1−x Sex films were deposited on glass substrates kept at 200°C by the electron beam evaporation technique. These films exhibited cubic structure and the lattice parameter increased with increase of Tellurium concentration in the films which confirmed the solid solution formation. The grain size is found to increase with Te content. The dislocation density and lattice strain show a decreasing trend with increasing of Te content. Band gap values of 2.73eV, 2.63eV, 2.52eV and 2.41eV have been calculated for the films of composition ‘x'=0.2, 0.4, 0.6 and 0.8, respectively, which confirmed the formation of solid solution between ZnSe and ZnTe. Refractive index of the films increased from 2.535 to 2.826 as the concentration of Te increased. All the films showed high resistivity values. Laser Raman spectral studies of ZnTe1−x Sex revealed LO phonon frequencies whose values are located in between the LO phonon frequencies of ZnSe and ZnTe. Springer Science+Business Media, LLC, 2010 Nagarethinam V. Department of Physics, A.V.V.M Sri Pushpam College, Poondi, India aut Ahamed M. MIET Arts and Science College, 620 007, Trichy, India aut Vijayakumar K. Department of Physics, KLN College of Information Tech, Madurai, India aut Amalraj L. Department of Physics, VHNSN College, Virudhunagar, India aut Balu A. Department of Physics, A.V.V.M Sri Pushpam College, Poondi, India aut Thayumanavan A. Department of Physics, A.V.V.M Sri Pushpam College, Poondi, India aut Murali K. Council of Scientific and Industrial Research, New Delhi, India aut Sanjeeviraja C. School of Physics, Alagappa University, 630 003, Karaikudi, India aut Jayachandran M. Council of Scientific and Industrial Research, New Delhi, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 607-613 0957-4522 22:6<607 2011 22 10854 https://doi.org/10.1007/s10854-010-0185-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0185-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Nagarethinam V. Department of Physics, A.V.V.M Sri Pushpam College, Poondi, India aut NATIONALLICENCE 700 1- Ahamed M. MIET Arts and Science College, 620 007, Trichy, India aut NATIONALLICENCE 700 1- Vijayakumar K. Department of Physics, KLN College of Information Tech, Madurai, India aut NATIONALLICENCE 700 1- Amalraj L. Department of Physics, VHNSN College, Virudhunagar, India aut NATIONALLICENCE 700 1- Balu A. Department of Physics, A.V.V.M Sri Pushpam College, Poondi, India aut NATIONALLICENCE 700 1- Thayumanavan A. Department of Physics, A.V.V.M Sri Pushpam College, Poondi, India aut NATIONALLICENCE 700 1- Murali K. Council of Scientific and Industrial Research, New Delhi, India aut NATIONALLICENCE 700 1- Sanjeeviraja C. School of Physics, Alagappa University, 630 003, Karaikudi, India aut NATIONALLICENCE 700 1- Jayachandran M. Council of Scientific and Industrial Research, New Delhi, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 607-613 0957-4522 22:6<607 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer