caa a22 4500 445826576 CHVBK 20180317145301.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10854-010-0197-5 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0197-5 Gold/silicon nanocomposites: synthesis, characterization, and application in detection of dopamine [Elektronische Daten] [Hui-Juan Yu, Xin-Tian Li, Hong Fang, Qi-Yu Chen, Fan Jiang, Guang Shao] Silicon nanowires (SiNWs) with the length of several hundreds of micrometers and an average diameter of 15nm were successfully synthesized via a thermal-evaporation oxide-assisted process. Then, a convenient method was applied to metallize the SiNWs just by dipping them into an aqueous deposition solution. During the metallization process, which is a redox reaction, gold nanoparticles (NPs) were prepared on SiNWs surface to confine the particle size and prevent agglomeration during the preparation and utilization of gold NPs. The synthesized SiNWs decorated with gold NPs were utilized to modify the glassy carbon electrode. Electrochemical measurements displayed that the modified electrode showed high sensitivity for dopamine (DA) detection. Springer Science+Business Media, LLC, 2010 Yu Hui-Juan School of Chemistry and Chemical Engineering, Sun Yat-Sen University, 510275, Guangzhou, People's Republic of China aut Li Xin-Tian Shenzhen Entry-Exit Inspection and Quarantine Bureau, No. 1011 Fuqiang Road, Futian District, 518045, Shenzhen, People's Republic of China aut Fang Hong Shenzhen Entry-Exit Inspection and Quarantine Bureau, No. 1011 Fuqiang Road, Futian District, 518045, Shenzhen, People's Republic of China aut Chen Qi-Yu Shenzhen Entry-Exit Inspection and Quarantine Bureau, No. 1011 Fuqiang Road, Futian District, 518045, Shenzhen, People's Republic of China aut Jiang Fan Shenzhen Entry-Exit Inspection and Quarantine Bureau, No. 1011 Fuqiang Road, Futian District, 518045, Shenzhen, People's Republic of China aut Shao Guang School of Chemistry and Chemical Engineering, Sun Yat-Sen University, 510275, Guangzhou, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 690-693 0957-4522 22:6<690 2011 22 10854 https://doi.org/10.1007/s10854-010-0197-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0197-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yu Hui-Juan School of Chemistry and Chemical Engineering, Sun Yat-Sen University, 510275, Guangzhou, People's Republic of China aut NATIONALLICENCE 700 1- Li Xin-Tian Shenzhen Entry-Exit Inspection and Quarantine Bureau, No. 1011 Fuqiang Road, Futian District, 518045, Shenzhen, People's Republic of China aut NATIONALLICENCE 700 1- Fang Hong Shenzhen Entry-Exit Inspection and Quarantine Bureau, No. 1011 Fuqiang Road, Futian District, 518045, Shenzhen, People's Republic of China aut NATIONALLICENCE 700 1- Chen Qi-Yu Shenzhen Entry-Exit Inspection and Quarantine Bureau, No. 1011 Fuqiang Road, Futian District, 518045, Shenzhen, People's Republic of China aut NATIONALLICENCE 700 1- Jiang Fan Shenzhen Entry-Exit Inspection and Quarantine Bureau, No. 1011 Fuqiang Road, Futian District, 518045, Shenzhen, People's Republic of China aut NATIONALLICENCE 700 1- Shao Guang School of Chemistry and Chemical Engineering, Sun Yat-Sen University, 510275, Guangzhou, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 690-693 0957-4522 22:6<690 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer