caa a22 4500 445826584 CHVBK 20180317145301.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10854-010-0190-z doi (NATIONALLICENCE)springer-10.1007/s10854-010-0190-z Synthesis and characterization of indium monoselenide (InSe) nanowires [Elektronische Daten] [T. Siciliano, A. Tepore, G. Micocci, A. Genga, M. Siciliano, E. Filippo] Indium monoselenide (InSe) nanowires were grown by the thermal evaporation method in argon atmosphere without the presence of any catalysts using InSe polycrystalline powder as the source material. No nanostructure growth was observed at deposition temperatures below 580°C. The nanostructures were discernable at temperatures above 620°C. Pure InSe nanowires were obtained at the deposition temperature of 660°C for 50min. The diameters of the nanowires were from 50 to 240nm and their lengths were up to several micrometers. X-ray diffraction spectrum reveals that the synthesized products were single-crystalline of the β-phase hexagonal structure of InSe with lattice constants a=4.006Å and c=16.642Å. The strong peak due to the reflection from the (004) crystal plane reveals that most nanowires grow with a strong preferred orientation. Springer Science+Business Media, LLC, 2010 Siciliano T. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut Tepore A. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut Micocci G. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut Genga A. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut Siciliano M. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut Filippo E. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 649-653 0957-4522 22:6<649 2011 22 10854 https://doi.org/10.1007/s10854-010-0190-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0190-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Siciliano T. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut NATIONALLICENCE 700 1- Tepore A. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut NATIONALLICENCE 700 1- Micocci G. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut NATIONALLICENCE 700 1- Genga A. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut NATIONALLICENCE 700 1- Siciliano M. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut NATIONALLICENCE 700 1- Filippo E. Dipartimento di Scienza dei Materiali, Università del Salento, 73100, Lecce, Italy aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 649-653 0957-4522 22:6<649 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer