caa a22 4500 445826606 CHVBK 20180317145301.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10854-010-0196-6 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0196-6 Undoped tin oxide thin films obtained by the sol gel technique, starting from a simple precursor solution [Elektronische Daten] [D. Torres Martínez, R. Castanedo Pérez, G. Torres Delgado, O. Zelaya Angel] In this work, we report the synthesis and the structural, optical and electrical properties of undoped tin oxide thin films obtained by the sol-gel technique. The films have been prepared from a simpler precursor solution than other ones reported; it is based on stannous chloride (SnCl2·2H2O), ethanol, glycerol and triethylamine. The films are deposited on glass slide substrates and sintered at temperatures in the 300-550°C range, in an open atmosphere. A second thermal treatment in vacuum is made in order to decrease the resistivity of the films. The X-ray diffraction patterns show the tetragonal phase of SnO2 with a small preferential orientation in the (110) plane. All films show high optical transmission (~85%) and a direct band gap value around of 3.8eV. The minimum resistivity value, 2×10−1 Ohm-cm, is obtained for the films sintered at 300 and 350°C and thermal treated in vacuum at 500°C for 1h. The decrease of the resistivity with the thermal treatment in vacuum is associated with an increase in the oxygen vacancies concentration. Springer Science+Business Media, LLC, 2010 Torres Martínez D. Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, A.P. 1-798, Qro. 76001, Querétaro, México aut Castanedo Pérez R. Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, A.P. 1-798, Qro. 76001, Querétaro, México aut Torres Delgado G. Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, A.P. 1-798, Qro. 76001, Querétaro, México aut Zelaya Angel O. Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, A.P. 07000, México, México aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 684-689 0957-4522 22:6<684 2011 22 10854 https://doi.org/10.1007/s10854-010-0196-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0196-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Torres Martínez D. Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, A.P. 1-798, Qro. 76001, Querétaro, México aut NATIONALLICENCE 700 1- Castanedo Pérez R. Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, A.P. 1-798, Qro. 76001, Querétaro, México aut NATIONALLICENCE 700 1- Torres Delgado G. Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, A.P. 1-798, Qro. 76001, Querétaro, México aut NATIONALLICENCE 700 1- Zelaya Angel O. Departamento de Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, A.P. 07000, México, México aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 684-689 0957-4522 22:6<684 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer