caa a22 4500 445826622 CHVBK 20180317145301.0 cr unu---uuuuu 170323e20110601xx s 000 0 eng 10.1007/s10854-010-0191-y doi (NATIONALLICENCE)springer-10.1007/s10854-010-0191-y Fabrication and ferroelectric properties of sol-gel derived 1-1 intergrowth-superlattice-structured Bi3TiNbO9-Bi4Ti3O12 thin films [Elektronische Daten] [Hua Wang, Jian Li, Jiwen Xu, Ling Yang, Minfang Ren] 1-1 intergrowth-superlattice-structured Bi3TiNbO9-Bi4Ti3O12 (BTN-BIT) ferroelectric thin films have been prepared on p-Si substrates by sol-gel processing. The precursor films are crystallized in the desired intergrown BTN-BIT superlattice structures by optimizing the processing conditions. Synthesized BTN-BIT thin films annealed below 750°C are polycrystalline, uniform and crack-free, no pyrochlore phase or other second phase, and exhibited good ferroelectric properties. As the annealing temperature increases from 600 to 700°C, both remanent polarization P r and coercive electric field E c of BTN-BIT thin films increase, but the pyrochlore phase in BTN-BIT films annealed above 750°C will impair the ferroelectric properties. The BTN-BIT thin films annealed at 700°C have a P r value ~19.1μC/cm2 and an E c value ~135kV/cm. Springer Science+Business Media, LLC, 2010 Wang Hua Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Li Jian Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Xu Jiwen Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Yang Ling Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Ren Minfang Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 654-658 0957-4522 22:6<654 2011 22 10854 https://doi.org/10.1007/s10854-010-0191-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0191-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang Hua Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Li Jian Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Xu Jiwen Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Yang Ling Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 700 1- Ren Minfang Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, 541004, Guilin, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/6(2011-06-01), 654-658 0957-4522 22:6<654 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer