<?xml version="1.0" encoding="UTF-8"?>
<collection xmlns="http://www.loc.gov/MARC21/slim">
 <record>
  <leader>     caa a22        4500</leader>
  <controlfield tag="001">445826657</controlfield>
  <controlfield tag="003">CHVBK</controlfield>
  <controlfield tag="005">20180317145301.0</controlfield>
  <controlfield tag="007">cr unu---uuuuu</controlfield>
  <controlfield tag="008">170323e20110901xx      s     000 0 eng  </controlfield>
  <datafield tag="024" ind1="7" ind2="0">
   <subfield code="a">10.1007/s10854-011-0302-4</subfield>
   <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="035" ind1=" " ind2=" ">
   <subfield code="a">(NATIONALLICENCE)springer-10.1007/s10854-011-0302-4</subfield>
  </datafield>
  <datafield tag="100" ind1="1" ind2=" ">
   <subfield code="a">Shi</subfield>
   <subfield code="D">Feng</subfield>
   <subfield code="u">College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="245" ind1="1" ind2="0">
   <subfield code="a">Effect of sputtering power on microstructure of dielectric ceramic thin films by RF magnetron sputtering method using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 as target</subfield>
   <subfield code="h">[Elektronische Daten]</subfield>
   <subfield code="c">[Feng Shi]</subfield>
  </datafield>
  <datafield tag="520" ind1="3" ind2=" ">
   <subfield code="a">Radio frequency (RF) magnetron sputtering method was applied to prepare dielectric ceramic thin films on SiO2 (110) substrates using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 microwave dielectric ceramics as target. The samples were deposited at different sputtering powers in Ar atmosphere. In particular, the microstructure and morphology of the thin films were investigated as a function of sputtering powers by X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results show that the thin films are polycrystalline and the sputtering power significantly influences the surface morphology and microstructure of the thin films. On increasing the sputtering power, the crystallinity improves and the grain size and roughness of the thin films reach maximum values at 200W.</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
   <subfield code="a">Springer Science+Business Media, LLC, 2011</subfield>
  </datafield>
  <datafield tag="773" ind1="0" ind2=" ">
   <subfield code="t">Journal of Materials Science: Materials in Electronics</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">22/9(2011-09-01), 1290-1296</subfield>
   <subfield code="x">0957-4522</subfield>
   <subfield code="q">22:9&lt;1290</subfield>
   <subfield code="1">2011</subfield>
   <subfield code="2">22</subfield>
   <subfield code="o">10854</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2="0">
   <subfield code="u">https://doi.org/10.1007/s10854-011-0302-4</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="908" ind1=" " ind2=" ">
   <subfield code="D">1</subfield>
   <subfield code="a">research-article</subfield>
   <subfield code="2">jats</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">856</subfield>
   <subfield code="E">40</subfield>
   <subfield code="u">https://doi.org/10.1007/s10854-011-0302-4</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">100</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Shi</subfield>
   <subfield code="D">Feng</subfield>
   <subfield code="u">College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">773</subfield>
   <subfield code="E">0-</subfield>
   <subfield code="t">Journal of Materials Science: Materials in Electronics</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">22/9(2011-09-01), 1290-1296</subfield>
   <subfield code="x">0957-4522</subfield>
   <subfield code="q">22:9&lt;1290</subfield>
   <subfield code="1">2011</subfield>
   <subfield code="2">22</subfield>
   <subfield code="o">10854</subfield>
  </datafield>
  <datafield tag="900" ind1=" " ind2="7">
   <subfield code="a">Metadata rights reserved</subfield>
   <subfield code="b">Springer special CC-BY-NC licence</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="898" ind1=" " ind2=" ">
   <subfield code="a">BK010053</subfield>
   <subfield code="b">XK010053</subfield>
   <subfield code="c">XK010000</subfield>
  </datafield>
  <datafield tag="949" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="F">NATIONALLICENCE</subfield>
   <subfield code="b">NL-springer</subfield>
  </datafield>
 </record>
</collection>
