caa a22 4500 445826665 CHVBK 20180317145301.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0335-8 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0335-8 Temperature dependence of dielectric and piezoelectric properties of (1− x )(BiScO3-0.64PbTiO3)- x LiNbO3 high-temperature relaxor ferroelectric ceramics [Elektronische Daten] [Qiang Zhang, Zhenrong Li, Lihua Li, Zhuo Xu, Xi Yao] (1−x)(0.36BiScO3-0.64PbTiO3)-xLiNbO3 (BSPT64-xLN) high-temperature relaxor ferroelectric ceramics near the morphotropic phase boundary (MPB) composition were investigated. X-ray diffraction showed a change in symmetry from MPB phase to rhombohedral phase with LiNbO3 content increasing. A change from normal ferroelectric features to relaxor ferroelectric features was observed with LiNbO3 substitution up to x=0.06, while high-temperature dielectric relaxation was exhibited at T max ~230 to 383°C for 0.02≤x≤0.06. The BSPT64-xLN ceramics with x=0.02 LiNbO3 exhibited good piezoelectric properties compared with BS-0.64PT ceramics: piezoelectric coefficients d 33=505pC/N, planar electromechanical coupling factors k p=0.47, and remnant polarization P r=40μC/cm2, respectively. The annealing temperature dependence of piezoelectric response for BSPT64-xLN ceramics was measured and it was found that the piezoelectric properties decreased slightly before 210°C for x=0.02 and 0.04, showing excellent thermal stability, which indicated that BSPT64-xLN relaxor ferroelectric ceramics can be used in the range of high temperature compared to Pb-based relaxor ferroelectrics. Springer Science+Business Media, LLC, 2011 Zhang Qiang Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, China aut Li Zhenrong Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, China aut Li Lihua Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, China aut Xu Zhuo Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, China aut Yao Xi Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1490-1494 0957-4522 22:9<1490 2011 22 10854 https://doi.org/10.1007/s10854-011-0335-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0335-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhang Qiang Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Li Zhenrong Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Li Lihua Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Xu Zhuo Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 700 1- Yao Xi Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, 710049, Xi'an, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1490-1494 0957-4522 22:9<1490 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer