caa a22 4500 445826673 CHVBK 20180317145301.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0287-z doi (NATIONALLICENCE)springer-10.1007/s10854-011-0287-z Effect of nanometer barium titanate powders on the dielectric properties of X7R ceramics [Elektronische Daten] [Shuang Wang, Hao Su, Haiyi Yuan, Liying Chen] High dielectric constant X7R dielectric materials were prepared by doping with nanometer BaTiO3 additives, with a dielectric constant as high as 5,400 and dielectric loss lower than 1.0% at 25°C, when they were sintered at 1,240°C for 4h. The effects of nanometer BaTiO3 additives on the microstructure and dielectric properties of X7R ceramics were investigated in this paper. The nanometer BaTiO3 additives were prepared by sol-gel method with an average particle size of ~65nm. It was favorable by nanometer BaTiO3 additives to make the ceramics hold high dielectric constant and still satisfy the requirement of EIA X7R specification. Due to the special nano-effect of the nanometer BaTiO3 additives, the densification of ceramics were promoted effectively, which resulted in the increase of dielectric constant. The temperature-capacitance characteristics which satisfied X7R specification were attributed to the formation of abundant "core-shell” structure, which gave rise to the abundant spontaneous polarization microarea and the decrease of the tetragonality (c/a ratio). Springer Science+Business Media, LLC, 2011 Wang Shuang Department of Electronic Engineering, Tianjin University of Technology and Education, 300222, Tianjin, China aut Su Hao Institute of Information, HeBei Polytechnic University, 063000, Hebei, China aut Yuan Haiyi Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, People's Republic of China aut Chen Liying Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1213-1217 0957-4522 22:9<1213 2011 22 10854 https://doi.org/10.1007/s10854-011-0287-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0287-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang Shuang Department of Electronic Engineering, Tianjin University of Technology and Education, 300222, Tianjin, China aut NATIONALLICENCE 700 1- Su Hao Institute of Information, HeBei Polytechnic University, 063000, Hebei, China aut NATIONALLICENCE 700 1- Yuan Haiyi Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, People's Republic of China aut NATIONALLICENCE 700 1- Chen Liying Institute of Electronics and Information Engineering, Tianjin University, 300072, Tianjin, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1213-1217 0957-4522 22:9<1213 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer