caa a22 4500 44582672X CHVBK 20180317145301.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0301-5 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0301-5 Dielectric properties of iron doped calcium copper titanate, CaCu3Ti3.9Fe0.1O12 ceramic [Elektronische Daten] [Alok Rai, N. Singh, Sang-Kwon Lee, K. Mandal, D. Kumar, Parkash, Om] Dielectric properties of iron doped CaCu3Ti4O12 (CCTO), viz. CaCu3Ti3.9Fe0.1O12 (CCTFO) prepared by a novel semi-wet route have been investigated. X-ray diffraction of powder sintered at 900°C show formation of single phase solid solution. Energy dispersive X-ray spectroscopy (EDX) confirmed the presence of CuO rich phase at grain boundaries of CCTFO. Nature of dielectric relaxation observed above room temperature is studied using complex plane impedance analysis and modulus spectroscopy. It has been found that out of the two relaxations reported earlier above room temperature, one occurring at lower temperature is due to grainboundaries interfacial polarization. Springer Science+Business Media, LLC, 2011 Rai Alok Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, Republic of Korea aut Singh N. Department of Physics, U.P. Autonomous College, 221002, Varanasi, Uttar Pradesh, India aut Lee Sang-Kwon Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, Republic of Korea aut Mandal K. Department of Applied Chemistry, Institute of Technology, Banaras Hindu University, 221005, Varanasi, Uttar Pradesh, India aut Kumar D. Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, 221005, Varanasi, Uttar Pradesh, India aut Om Parkash, Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, 221005, Varanasi, Uttar Pradesh, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1286-1289 0957-4522 22:9<1286 2011 22 10854 https://doi.org/10.1007/s10854-011-0301-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0301-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rai Alok Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, Republic of Korea aut NATIONALLICENCE 700 1- Singh N. Department of Physics, U.P. Autonomous College, 221002, Varanasi, Uttar Pradesh, India aut NATIONALLICENCE 700 1- Lee Sang-Kwon Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, Republic of Korea aut NATIONALLICENCE 700 1- Mandal K. Department of Applied Chemistry, Institute of Technology, Banaras Hindu University, 221005, Varanasi, Uttar Pradesh, India aut NATIONALLICENCE 700 1- Kumar D. Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, 221005, Varanasi, Uttar Pradesh, India aut NATIONALLICENCE 700 1- Om Parkash Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, 221005, Varanasi, Uttar Pradesh, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1286-1289 0957-4522 22:9<1286 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer