caa a22 4500 445826800 CHVBK 20180317145301.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0336-7 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0336-7 Study on thermal stability of electroless deposited Ni-Co-P alloy thin film [Elektronische Daten] [Anuj Kumar, Amanpal Singh, Mukesh Kumar, Dinesh Kumar, Sumit Barthwal] The Ni-P and Ni-Co-P alloy thin films were deposited on silicon substrates with electroless technique. The solid state metallurgical reactions were investigated with silicon for the viewpoint of Co co-deposition effect. The alloy film kept amorphous state with increasing Co content even though the P content decreased. The films become more amorphous, and the thermal stability increased with increment of Co content in the deposit. The Co content was varied from 11.013 to 45.068 wt% while P content was decreased from 9.340 to 6.491 wt% by varying the concentration of components in electroless deposition baths. The thermal stability was examined by X-ray diffractometer (XRD), four probe, and atomic force microscopy (AFM). The results indicated the Ni-Co-P alloy films with lower P content show the higher thermal stability then the ordinary Ni-P films and prevent the silicidation at low temperature because the Ni crystallization formation suppressed by the co-deposition of Co. Springer Science+Business Media, LLC, 2011 Kumar Anuj Electronic Science Department, Kurukshetra University, 136119, Kurukshetra, India aut Singh Amanpal Electronic Science Department, Kurukshetra University, 136119, Kurukshetra, India aut Kumar Mukesh Electronic Science Department, Kurukshetra University, 136119, Kurukshetra, India aut Kumar Dinesh Electronic Science Department, Kurukshetra University, 136119, Kurukshetra, India aut Barthwal Sumit Nano Science and Nano Technology Unit, IIT, 208016, Kanpur, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1495-1500 0957-4522 22:9<1495 2011 22 10854 https://doi.org/10.1007/s10854-011-0336-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0336-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kumar Anuj Electronic Science Department, Kurukshetra University, 136119, Kurukshetra, India aut NATIONALLICENCE 700 1- Singh Amanpal Electronic Science Department, Kurukshetra University, 136119, Kurukshetra, India aut NATIONALLICENCE 700 1- Kumar Mukesh Electronic Science Department, Kurukshetra University, 136119, Kurukshetra, India aut NATIONALLICENCE 700 1- Kumar Dinesh Electronic Science Department, Kurukshetra University, 136119, Kurukshetra, India aut NATIONALLICENCE 700 1- Barthwal Sumit Nano Science and Nano Technology Unit, IIT, 208016, Kanpur, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1495-1500 0957-4522 22:9<1495 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer