caa a22 4500 445826851 CHVBK 20180317145301.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0331-z doi (NATIONALLICENCE)springer-10.1007/s10854-011-0331-z Structural and optical properties of nanocrystalline WO3 thin films [Elektronische Daten] [K. Srinivasa Rao, B. Rajini Kanth, G. Srujana Devi, P. Mukhopadhyay] The nanocrystalline WO3 thin films were deposited by r.f. magnetron sputtering on quartz and p- type Si (100) substrates at a constant power of 25W and at three different sputtering pressures (0.05, 0.01 and 0.5mbar) and post annealed at different temperatures. The deposited films were characterized by XRD, UV-VIS spectrophotometry, ellipsometry and atomic force microscopy (AFM). The structural studies from XRD spectra reveals that the films deposited at 0.05mbar and post annealed at 573 and 673K have the predominant orthorhombic phase, whereas at 0.1mbar and 573, 673K triclinic phase is predominant. When sputtering pressure is at 0.5mbar the predominant phase is monoclinic when annealed at 473K and triclinic at 673K. The optical energy gap is influenced significantly by sputtering pressure and post annealing temperatures. The optical energy gap of the films deposited at higher sputtering pressures and post annealed at lower temperatures is high due to smaller crystallite sizes. The thickness of all deposited films at different conditions is around 200nm. Springer Science+Business Media, LLC, 2011 Srinivasa Rao K. Post Graduate Department of Physics, P.G. Centre, P.B. Siddartha College of Arts and Science, 520010, Vijayawada, Andhra Pradesh, India aut Rajini Kanth B. LCMP, S.N. Bose National Centre for Basic Sciences, 700098, Salt Lake, Kolkata, India aut Srujana Devi G. Post Graduate Department of Physics, P.G. Centre, P.B. Siddartha College of Arts and Science, 520010, Vijayawada, Andhra Pradesh, India aut Mukhopadhyay P. LCMP, S.N. Bose National Centre for Basic Sciences, 700098, Salt Lake, Kolkata, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1466-1472 0957-4522 22:9<1466 2011 22 10854 https://doi.org/10.1007/s10854-011-0331-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0331-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Srinivasa Rao K. Post Graduate Department of Physics, P.G. Centre, P.B. Siddartha College of Arts and Science, 520010, Vijayawada, Andhra Pradesh, India aut NATIONALLICENCE 700 1- Rajini Kanth B. LCMP, S.N. Bose National Centre for Basic Sciences, 700098, Salt Lake, Kolkata, India aut NATIONALLICENCE 700 1- Srujana Devi G. Post Graduate Department of Physics, P.G. Centre, P.B. Siddartha College of Arts and Science, 520010, Vijayawada, Andhra Pradesh, India aut NATIONALLICENCE 700 1- Mukhopadhyay P. LCMP, S.N. Bose National Centre for Basic Sciences, 700098, Salt Lake, Kolkata, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1466-1472 0957-4522 22:9<1466 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer