caa a22 4500 44582686X CHVBK 20180317145301.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0296-y doi (NATIONALLICENCE)springer-10.1007/s10854-011-0296-y Electrical and structural properties of LiNbO3 films, grown by RF magnetron sputtering [Elektronische Daten] [V. Iyevlev, A. Kostyuchenko, M. Sumets, V. Vakhtel] Nanocrystalline films of LiNbO3 on substrates (001)Si and (001)Si-SiO2 were synthesized by the method of RF magnetron sputtering. The elemental composition, structure of the LiNbO3 films, and also—electrical properties of heterostructures (001)Si-LiNbO3 and (001)Si-SiO2-LiNbO3 were studied. The dielectric constant of the LiNbO3 films calculated from the capacitance at the accumulation region was about 28. The resistivity was 1·109ohmcm for films on (100)Si and 1.6·1011ohmcm for films on (001)Si-SiO2. It has been determined that transmission of the current in the studied structures during direct biases is defined by hopping conduction, and, during reverse biases—by the Poole-Frenkel effect. Springer Science+Business Media, LLC, 2011 Iyevlev V. Voronezh State University, Universitetskaya Square, 1, 394000, Voronezh, Russia aut Kostyuchenko A. Voronezh State University, Universitetskaya Square, 1, 394000, Voronezh, Russia aut Sumets M. Voronezh State Architectural University, 20-th October's Anniversary str., 84, 394006, Voronezh, Russia aut Vakhtel V. Voronezh State University, Universitetskaya Square, 1, 394000, Voronezh, Russia aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1258-1263 0957-4522 22:9<1258 2011 22 10854 https://doi.org/10.1007/s10854-011-0296-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0296-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Iyevlev V. Voronezh State University, Universitetskaya Square, 1, 394000, Voronezh, Russia aut NATIONALLICENCE 700 1- Kostyuchenko A. Voronezh State University, Universitetskaya Square, 1, 394000, Voronezh, Russia aut NATIONALLICENCE 700 1- Sumets M. Voronezh State Architectural University, 20-th October's Anniversary str., 84, 394006, Voronezh, Russia aut NATIONALLICENCE 700 1- Vakhtel V. Voronezh State University, Universitetskaya Square, 1, 394000, Voronezh, Russia aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1258-1263 0957-4522 22:9<1258 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer