caa a22 4500 445826886 CHVBK 20180317145302.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0332-y doi (NATIONALLICENCE)springer-10.1007/s10854-011-0332-y Ni doping effect on electrical conductivity of ZnO nanocrystalline thin films [Elektronische Daten] [A. Yildiz, B. Kayhan, B. Yurduguzel, A. Rambu, F. Iacomi, S. Simon] The electrical conductivity behavior of undoped and Ni-doped ZnO nanocrystalline thin films prepared by spin-coating method was investigated as a function of temperature. The films were found to have polycrystalline structure. Grain size and the conductivity of the films were found to decrease significantly with increase in Ni concentration. This behavior was well explained by the grain boundary conduction model that takes into account electron trapping in surface states. It was observed that by increasing the Ni-doping level the surface trap density increases and implicitly the conductivity decreases. Springer Science+Business Media, LLC, 2011 Yildiz A. Department of Physics, Faculty of Science and Arts, Ahi Evran University, 40040, Kirsehir, Turkey aut Kayhan B. Department of Physics, Faculty of Science and Arts, Ahi Evran University, 40040, Kirsehir, Turkey aut Yurduguzel B. Department of Physics, Faculty of Science and Arts, Ahi Evran University, 40040, Kirsehir, Turkey aut Rambu A. Faculty of Physics, Alexandru Ioan Cuza University, 11 Carol I Blvd., 700506, Iasi, Romania aut Iacomi F. Faculty of Physics, Alexandru Ioan Cuza University, 11 Carol I Blvd., 700506, Iasi, Romania aut Simon S. Faculty of Physics & Institute of Interdisciplinary Research in Bio-Nano-Sciences, Babes-Bolyai University, 1 M. Kogalniceanu Street, 400084, Cluj-Napoca, Romania aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1473-1478 0957-4522 22:9<1473 2011 22 10854 https://doi.org/10.1007/s10854-011-0332-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0332-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yildiz A. Department of Physics, Faculty of Science and Arts, Ahi Evran University, 40040, Kirsehir, Turkey aut NATIONALLICENCE 700 1- Kayhan B. Department of Physics, Faculty of Science and Arts, Ahi Evran University, 40040, Kirsehir, Turkey aut NATIONALLICENCE 700 1- Yurduguzel B. Department of Physics, Faculty of Science and Arts, Ahi Evran University, 40040, Kirsehir, Turkey aut NATIONALLICENCE 700 1- Rambu A. Faculty of Physics, Alexandru Ioan Cuza University, 11 Carol I Blvd., 700506, Iasi, Romania aut NATIONALLICENCE 700 1- Iacomi F. Faculty of Physics, Alexandru Ioan Cuza University, 11 Carol I Blvd., 700506, Iasi, Romania aut NATIONALLICENCE 700 1- Simon S. Faculty of Physics & Institute of Interdisciplinary Research in Bio-Nano-Sciences, Babes-Bolyai University, 1 M. Kogalniceanu Street, 400084, Cluj-Napoca, Romania aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1473-1478 0957-4522 22:9<1473 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer