caa a22 4500 445826940 CHVBK 20180317145302.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0306-0 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0306-0 Barrier/bonding layers on bismuth telluride (Bi2Te3) for high temperature thermoelectric modules [Elektronische Daten] [Wen Lin, Daniel Wesolowski, Chin Lee] In this research, a fundamental study is conducted to identify the materials and develop the processes for producing barrier/bonding composite on Bi2Te3 for high temperature thermoelectric applications. The composite must meet four basic requirements: (a) prevent inter-diffusion between the electrode material, for our design, silver(Ag) and Bi2Te3, (b) bond well to Bi2Te3, (c) bond well to Ag electrode, and (d) do not themselves diffuse into Bi2Te3. The composites investigated include palladium (Pd), nickel/gold (Ni/Au), Ag, and titanium/gold (Ti/Au). After annealing at 250°C for 200h, only the Ti/Au design meets all four requirements. The thickness of Ti and Au, respectively, is only 100nm. Other than meeting these four requirements, the Ti/Au layers exhibit excellent step coverage on the rough Bi2Te3 surface even after the annealing process. The Author(s), 2011 Lin Wen Electrical Engineering and Computer Science, Materials and Manufacturing Technology, University of California, 92697-2660, Irvine, CA, USA aut Wesolowski Daniel Power Sources Technology Group, Sandia National Laboratories, 87185, Albuquerque, NM, USA aut Lee Chin Electrical Engineering and Computer Science, Materials and Manufacturing Technology, University of California, 92697-2660, Irvine, CA, USA aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1313-1320 0957-4522 22:9<1313 2011 22 10854 https://doi.org/10.1007/s10854-011-0306-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0306-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lin Wen Electrical Engineering and Computer Science, Materials and Manufacturing Technology, University of California, 92697-2660, Irvine, CA, USA aut NATIONALLICENCE 700 1- Wesolowski Daniel Power Sources Technology Group, Sandia National Laboratories, 87185, Albuquerque, NM, USA aut NATIONALLICENCE 700 1- Lee Chin Electrical Engineering and Computer Science, Materials and Manufacturing Technology, University of California, 92697-2660, Irvine, CA, USA aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1313-1320 0957-4522 22:9<1313 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer