caa a22 4500 445826959 CHVBK 20180317145302.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0323-z doi (NATIONALLICENCE)springer-10.1007/s10854-011-0323-z Effect of annealing temperature on electrical and nano-structural properties of sol-gel derived ZnO thin films [Elektronische Daten] [M. Vishwas, K. Narasimha Rao, A. Phani, K. Arjuna Gowda, R. Chakradhar] Zinc oxide (ZnO) thin films have been prepared on silicon substrates by sol-gel spin coating technique with spinning speed of 3,000rpm. The films were annealed at different temperatures from 200 to 500°C and found that ZnO films exhibit different nanostructures at different annealing temperatures. The X-ray diffraction (XRD) results showed that the ZnO films convert from amorphous to polycrystalline phase after annealing at 400°C. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on pre-cleaned silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased with increasing annealing temperature. The oxide capacitance was measured at different annealing temperatures and different signal frequencies. The dielectric constant and the loss factor (tanδ) were increased with increase of annealing temperature. Springer Science+Business Media, LLC, 2011 Vishwas M. Department of Physics, Govt. Science College, 560001, Bangalore, India aut Narasimha Rao K. Department of Instrumentation and Applied Physics, Indian Institute of Science, 560012, Bangalore, India aut Phani A. Nano-Research for Advanced Materials Technologies, 560040, Bangalore, India aut Arjuna Gowda K. Department of Physics, Govt. College for Women, 571401, Mandya, India aut Chakradhar R. CSIR-NAL, 560017, Bangalore, India aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1415-1419 0957-4522 22:9<1415 2011 22 10854 https://doi.org/10.1007/s10854-011-0323-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0323-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Vishwas M. Department of Physics, Govt. Science College, 560001, Bangalore, India aut NATIONALLICENCE 700 1- Narasimha Rao K. Department of Instrumentation and Applied Physics, Indian Institute of Science, 560012, Bangalore, India aut NATIONALLICENCE 700 1- Phani A. Nano-Research for Advanced Materials Technologies, 560040, Bangalore, India aut NATIONALLICENCE 700 1- Arjuna Gowda K. Department of Physics, Govt. College for Women, 571401, Mandya, India aut NATIONALLICENCE 700 1- Chakradhar R. CSIR-NAL, 560017, Bangalore, India aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1415-1419 0957-4522 22:9<1415 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer