caa a22 4500 445826967 CHVBK 20180317145302.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0325-x doi (NATIONALLICENCE)springer-10.1007/s10854-011-0325-x Deposition of AgGaS2 thin films by double source thermal evaporation technique [Elektronische Daten] [H. Karaagac, M. Parlak] In this study, polycrystalline AgGaS2 thin films were deposited by the sequential evaporation of AgGaS2 and Ag sources with thermal evaporation technique. Thermal treatment in nitrogen atmosphere for 5min up to 700°C was applied to the deposited thin films and that resulted in the mono phase AgGaS2 thin films without the participation of any other minor phase. Structural and compositional analyses showed the structure of the films completely changes with annealing process. The measurements of transmittance and reflectance allowed us to calculate the band gap of films lying in 2.65 and 2.79eV depending on annealing temperature. The changes in the structure with annealing process also modify the electrical properties of the films. The resistivity of the samples varied in between 2×103 and 9×106 (Ω-cm). The room temperature mobility depending on the increasing annealing temperature was in the range of 6.7-37 (cm2V−1s−1) with the changes in carrier concentrations lying in 5.7×1013-2.5×1010cm−3. Mobility-temperature dependence was also analyzed to determine the scattering mechanisms in the studied temperature range with annealing. The variations in the electrical parameters of the films were discussed in terms of their structural changes. Springer Science+Business Media, LLC, 2011 Karaagac H. Department of Physics, Middle East Technical University, 06531, Ankara, Turkey aut Parlak M. Department of Physics, Middle East Technical University, 06531, Ankara, Turkey aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1426-1432 0957-4522 22:9<1426 2011 22 10854 https://doi.org/10.1007/s10854-011-0325-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0325-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Karaagac H. Department of Physics, Middle East Technical University, 06531, Ankara, Turkey aut NATIONALLICENCE 700 1- Parlak M. Department of Physics, Middle East Technical University, 06531, Ankara, Turkey aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1426-1432 0957-4522 22:9<1426 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer