caa a22 4500 445826983 CHVBK 20180317145302.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0312-2 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0312-2 Growth and optical properties of aluminum-doped zinc oxide nanostructures on flexible substrates in flexible electronics [Elektronische Daten] [Jang Shim, Han Kim, Hyuk Chang, Sung-O Kim] Undoped ZnO nanowire arrays and Al-doped ZnO nanostructures with nanowires and nanosheets were successfully synthesized on a polyethylene terephthalate substrate using the rapid hydrothermal synthesis. These undoped ZnO nanowire arrays showed close alignment with highly c-axis oriented and well-defined hexagonal facets (001). The coexistence of the nanowires and nanosheets was observed during the introduction of Al ions. The number of nanosheets increased due to the Al doping concentration and the lack of surface energy. The diameter of the nanosheets and the length of nanowire arrays also increased as a function of the growth time. Room-temperature photoluminescence spectra show that the ZnO:Al nanostructures on the ZnO seeded polyethylene terephthalate substrate yield low level of the defect density compared to the ZnO seeded glass substrate to remove post annealing process. Springer Science+Business Media, LLC, 2011 Shim Jang Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, 29634, Clemson, SC, USA aut Kim Han Energy Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea aut Chang Hyuk Energy Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea aut Kim Sung-O Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, 29634, Clemson, SC, USA aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1350-1356 0957-4522 22:9<1350 2011 22 10854 https://doi.org/10.1007/s10854-011-0312-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0312-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Shim Jang Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, 29634, Clemson, SC, USA aut NATIONALLICENCE 700 1- Kim Han Energy Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea aut NATIONALLICENCE 700 1- Chang Hyuk Energy Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea aut NATIONALLICENCE 700 1- Kim Sung-O Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, 29634, Clemson, SC, USA aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1350-1356 0957-4522 22:9<1350 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer