caa a22 4500 44582705X CHVBK 20180317145302.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0305-1 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0305-1 Microstructure of interfacial reaction layer in Sn-Ag-Cu/electroless Ni (P) solder joint [Elektronische Daten] [Han-Byul Kang, Jee-Hwan Bae, Jeong-Won Yoon, Seung-Boo Jung, Jongwoo Park, Cheol-Woong Yang] This study examined the interfacial reaction in Sn-3.5Ag-0.7Cu/electroless Ni (P) solder joints using various TEM techniques. TEM confirmed that three types of intermetallic compounds (Ag3Sn, (Cu, Ni)6Sn5 and (Ni, Cu)3Sn4) formed in the solder joints. In addition, interfacial reaction layers between the IMCs and the electroless Ni (P) are composed of two reaction layers (ternary and P-rich Ni layers). The ternary layer is composed of orthorhombic Ni2SnP phase and the P-rich Ni layer is dominantly composed of Ni3P. Furthermore, Kirkendall voids were clearly observed in the ternary layer and P-rich Ni layer. The Sn has diffused preferentially along the grain boundaries in the (Ni,Cu)3Sn4 IMCs. Springer Science+Business Media, LLC, 2011 Kang Han-Byul School of Advanced Material Science and Engineering, Sungkyunkwan University, 440-746, Suwon, South Korea aut Bae Jee-Hwan School of Advanced Material Science and Engineering, Sungkyunkwan University, 440-746, Suwon, South Korea aut Yoon Jeong-Won School of Advanced Material Science and Engineering, Sungkyunkwan University, 440-746, Suwon, South Korea aut Jung Seung-Boo School of Advanced Material Science and Engineering, Sungkyunkwan University, 440-746, Suwon, South Korea aut Park Jongwoo Technology Reliability, System LSI, Samsung Electronics, 446-711, Yongin, South Korea aut Yang Cheol-Woong School of Advanced Material Science and Engineering, Sungkyunkwan University, 440-746, Suwon, South Korea aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1308-1312 0957-4522 22:9<1308 2011 22 10854 https://doi.org/10.1007/s10854-011-0305-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0305-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kang Han-Byul School of Advanced Material Science and Engineering, Sungkyunkwan University, 440-746, Suwon, South Korea aut NATIONALLICENCE 700 1- Bae Jee-Hwan School of Advanced Material Science and Engineering, Sungkyunkwan University, 440-746, Suwon, South Korea aut NATIONALLICENCE 700 1- Yoon Jeong-Won School of Advanced Material Science and Engineering, Sungkyunkwan University, 440-746, Suwon, South Korea aut NATIONALLICENCE 700 1- Jung Seung-Boo School of Advanced Material Science and Engineering, Sungkyunkwan University, 440-746, Suwon, South Korea aut NATIONALLICENCE 700 1- Park Jongwoo Technology Reliability, System LSI, Samsung Electronics, 446-711, Yongin, South Korea aut NATIONALLICENCE 700 1- Yang Cheol-Woong School of Advanced Material Science and Engineering, Sungkyunkwan University, 440-746, Suwon, South Korea aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1308-1312 0957-4522 22:9<1308 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer