caa a22 4500 445827122 CHVBK 20180317145302.0 cr unu---uuuuu 170323e20110901xx s 000 0 eng 10.1007/s10854-011-0334-9 doi (NATIONALLICENCE)springer-10.1007/s10854-011-0334-9 Effects of oxygen partial pressures on microstructures and compositions of BaO-SrO-ZnO-Nb2O5 thin films by RF-sputtering method [Elektronische Daten] [Feng Shi, Feifei Ji] Ceramic thin films have been deposited by radio frequency magnetron sputtering method, using a mixture of 1mol (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 and 1mol ZnO as target. The effects of oxygen partial pressures on crystallization and morphologies of thin films have been investigated in detail by X-ray diffraction, scanning electron microscope (SEM), and atomic force microscope. X-ray photoelectron spectroscopy (XPS) analysis was carried out to identify the composition and chemical state near the films' surface. It is observed that the diffraction intensity of (001) peak increases dramatically when a small amount of oxygen is added to Ar atmosphere. The cross-sectional SEM images verify that the growth rate decreases sharply due to existence of oxygen, because the thickness decreases from 3.10μm (pure Ar) to 1.38μm (O2/Ar ratio of 0.2:1). The morphologies indicate that the thin films are crackfree with perfect crystallization and all the particles are uniform in size when the O2/Ar flow ratios are 0.2:1 and 0.4:1. The ceramics thin films grown at O2/Ar flow ratio of 0.2:1 does not contain adsorbed oxygen, which is confirmed by XPS. Springer Science+Business Media, LLC, 2011 Shi Feng College of Physics and Electronics, Shandong Normal University, 250014, Jinan, P.R.China aut Ji Feifei College of Physics and Electronics, Shandong Normal University, 250014, Jinan, P.R.China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1483-1489 0957-4522 22:9<1483 2011 22 10854 https://doi.org/10.1007/s10854-011-0334-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-011-0334-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Shi Feng College of Physics and Electronics, Shandong Normal University, 250014, Jinan, P.R.China aut NATIONALLICENCE 700 1- Ji Feifei College of Physics and Electronics, Shandong Normal University, 250014, Jinan, P.R.China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/9(2011-09-01), 1483-1489 0957-4522 22:9<1483 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer