caa a22 4500 445827203 CHVBK 20180317145302.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0232-6 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0232-6 Macroporous silicon: efficient antireflective layer on crystalline silicon [Elektronische Daten] [Faruk Fonthal, Ivaldo Torres, Angel Rodriguez] A macroporous silicon layer (ma-PS) electrochemically grown on crystalline silicon surface can be used as an efficient antireflective layer in optical devices as antireflection coating. In this work, we presented the ma-PS layers fabricated on crystalline silicon (c-Si) n-type and p +-type, obtained by electrochemical etching. The morphology, porosity, thickness of ma-PS layer can be adjusted by controlling the electrochemical formation conditions. The optical behaviour of the antireflective coating over the solar spectrum is determined, resulting in very low values of the normalized reflectivity coefficient (below ~1%). The reflectivity measurements were evaluated at 45° in the different samples of the ma-PS/c-Si. Springer Science+Business Media, LLC, 2010 Fonthal Faruk Advanced Materials for Micro and Nanotechnology Group, IMAMNT, Departamento de Automática y Electrónica, Universidad Autónoma de Occidente, Calle 25 No. 115-85, Cali, Colombia aut Torres Ivaldo Advanced Materials for Micro and Nanotechnology Group, IMAMNT, Departamento de Automática y Electrónica, Universidad Autónoma de Occidente, Calle 25 No. 115-85, Cali, Colombia aut Rodriguez Angel Micro and Nanotechnology Group, Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya, C/Gran Capità s/n, Campus Nord, 08074, Barcelona, Spain aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 895-900 0957-4522 22:7<895 2011 22 10854 https://doi.org/10.1007/s10854-010-0232-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0232-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Fonthal Faruk Advanced Materials for Micro and Nanotechnology Group, IMAMNT, Departamento de Automática y Electrónica, Universidad Autónoma de Occidente, Calle 25 No. 115-85, Cali, Colombia aut NATIONALLICENCE 700 1- Torres Ivaldo Advanced Materials for Micro and Nanotechnology Group, IMAMNT, Departamento de Automática y Electrónica, Universidad Autónoma de Occidente, Calle 25 No. 115-85, Cali, Colombia aut NATIONALLICENCE 700 1- Rodriguez Angel Micro and Nanotechnology Group, Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya, C/Gran Capità s/n, Campus Nord, 08074, Barcelona, Spain aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 895-900 0957-4522 22:7<895 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer