caa a22 4500 44582722X CHVBK 20180317145302.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0208-6 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0208-6 Synthesis, characterization and growth mechanism of ZnO nanowires on NiCl2-coated Si substrates [Elektronische Daten] [Huizhao Zhuang, Jie Wang, Junlin Li, Peng Xu, Feng Shi] Well-crystallized ZnO nanowires have been successfully synthesized on NiCl2-coated Si substrates via a carbon thermal reduction deposition process. The pre-deposited Ni nanoparticles by dipping the substrates into NiCl2 solution can promote the formation of ZnO nuclei. The as-synthesized nanowires were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectrum. The results demonstrate that the as-fabricated nanowires with about 60nm in diameter and several tens of micrometers in length are preferentially arranged along [0001] direction with (0002) as the dominate surface. Room temperature PL spectrum illustrates that the ZnO nanowires exist a UV emission peak and a green emission peak, and the peak centers locate at 387 and 510nm. Finally, the growth mechanism of the nanowires is briefly discussed. Springer Science+Business Media, LLC, 2010 Zhuang Huizhao Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut Wang Jie Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut Li Junlin Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut Xu Peng Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut Shi Feng Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 765-770 0957-4522 22:7<765 2011 22 10854 https://doi.org/10.1007/s10854-010-0208-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0208-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhuang Huizhao Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut NATIONALLICENCE 700 1- Wang Jie Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut NATIONALLICENCE 700 1- Li Junlin Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut NATIONALLICENCE 700 1- Xu Peng Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut NATIONALLICENCE 700 1- Shi Feng Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 765-770 0957-4522 22:7<765 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer