caa a22 4500 445827238 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0222-8 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0222-8 The effect of CuO doping on the microstructures and dielectric properties of BaTiO3 ceramics [Elektronische Daten] [Tao Li, Kun Yang, Renzhong Xue, Yuncai Xue, Zhenping Chen] (1−x) BaTiO3/xCuO ceramic pellets with x=0, 0.2, 0.4, 0.6, and 0.8% respectively were prepared by the traditional solid-state reaction method. The effect of CuO doping on the microstructure and dielectric properties of BaTiO3 ceramics has been investigated. SEM and XRD results at room temperature show that the grain size grows with the increase of CuO content under the same sintering conditions and the crystal structure undergoes the mixed phases (pseudocubic/tetragonal) to tetragonal phase transition with the growth of grain size. Regular shape grains with average grain size ~2μm are detectable in the specimens as CuO dopant content adds up to 0.8% and the crystal structure has completely changed into tetragonal phase. The permittivity increases markedly for CuO dopant content x=0.2~0.4% and the dielectric loss decreases significantly after being doped by CuO and down to a minimum value for x=0.8%. In addition, the permittivity and dielectric loss display a good stability in a broad frequency range comparing that of pure BaTiO3 ceramics. Springer Science+Business Media, LLC, 2010 Li Tao Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, People's Republic of China aut Yang Kun Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, People's Republic of China aut Xue Renzhong Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, People's Republic of China aut Xue Yuncai Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, People's Republic of China aut Chen Zhenping Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 838-842 0957-4522 22:7<838 2011 22 10854 https://doi.org/10.1007/s10854-010-0222-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0222-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Tao Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, People's Republic of China aut NATIONALLICENCE 700 1- Yang Kun Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, People's Republic of China aut NATIONALLICENCE 700 1- Xue Renzhong Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, People's Republic of China aut NATIONALLICENCE 700 1- Xue Yuncai Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, People's Republic of China aut NATIONALLICENCE 700 1- Chen Zhenping Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 838-842 0957-4522 22:7<838 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer