caa a22 4500 445827254 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0209-5 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0209-5 Shi Feng College of Physics & Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut Fabrication of thin films by sputtering deposition using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic as target [Elektronische Daten] [Feng Shi] Dielectric ceramic thin films were fabricated on SiO2 (110) substrates by the radio frequency (RF) magnetron sputtering method using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 microwave dielectric ceramic as target. The microstructure, components, and morphology of the thin films were investigated thoroughly. The results reveal that the experimental conditions can affect the growth of the thin films significantly. The main phases of the thin films are Ba0.5Sr0.5Nb2O6 and Ba0.27Sr0.75Nb2O5.78, which are of different composition from that of the ceramic target due to Zn loss. The thin films are polycrystalline with high-quality crystalline and are made up of dense rod-like structures. The growth mechanism of the thin films is discussed in particular. Springer Science+Business Media, LLC, 2010 Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 771-775 0957-4522 22:7<771 2011 22 10854 https://doi.org/10.1007/s10854-010-0209-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0209-5 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Shi Feng College of Physics & Electronics, Shandong Normal University, 250014, Jinan, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 771-775 0957-4522 22:7<771 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer