caa a22 4500 445827262 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0226-4 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0226-4 Electrical properties and extension mechanism of Ohmic region of sol-gel derived Ba0.7Sr0.3TiO3 thin films by Zn doping [Elektronische Daten] [Zhijun Ma, Tianjin Zhang, Jingyang Wang] Undoped and 3mol% Zn-doped barium strontium titanate thin films were deposited on Pt/Ti/SiO2/Si substrates using a sol-gel method. The microstructure and morphology of the films were characterized by X-ray diffraction and atomic force microscopy. It showed that both films are polycrystalline with a perovskite structure and smaller grains were observed for the Zn-doped thin films. Dielectric measurements showed that the dielectric loss at 500kHz was reduced from 0.042 to 0.019 by Zn doping, which was accompanied by a slight decrease of the dielectric constant from 303 to 273. At an applied electric field of 60kV/cm, the leakage current density of the Zn-doped Ba0.7Sr0.3TiO3 thin films was 2.5×10−8 A/cm2, which was by two orders of magnitude lower than that of the undoped films. The leakage current characteristics also indicated that the Ohmic conduction region of barium strontium titanate thin films was extended by Zn dopant. The microstructure, electrical properties and extension mechanism of Ohmic conduction region of the Zn-doped barium strontium titanate thin films were discussed in relation to the effect of Zn doping. Springer Science+Business Media, LLC, 2010 Ma Zhijun School of Materials Science and Engineering, Hubei University, 430062, Wuhan, People's Republic of China aut Zhang Tianjin School of Materials Science and Engineering, Hubei University, 430062, Wuhan, People's Republic of China aut Wang Jingyang School of Materials Science and Engineering, Hubei University, 430062, Wuhan, People's Republic of China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 862-865 0957-4522 22:7<862 2011 22 10854 https://doi.org/10.1007/s10854-010-0226-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0226-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ma Zhijun School of Materials Science and Engineering, Hubei University, 430062, Wuhan, People's Republic of China aut NATIONALLICENCE 700 1- Zhang Tianjin School of Materials Science and Engineering, Hubei University, 430062, Wuhan, People's Republic of China aut NATIONALLICENCE 700 1- Wang Jingyang School of Materials Science and Engineering, Hubei University, 430062, Wuhan, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 862-865 0957-4522 22:7<862 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer