caa a22 4500 445827289 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0199-3 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0199-3 Porous silicon nanowires fabricated by electrochemical and laser-induced etching [Elektronische Daten] [Asmiet Ramizy, Z. Hassan, Khalid Omar] Electrochemical and laser-induced etching processes were simultaneously used to synthesize the nanowires structure of porous silicon (PS). Surface morphology and structural properties of nanostructured silicon were characterized by using scanning electron microscopy (SEM) and atomic forces microscopy (AFM) images. Nanowires with dimensions of few nanometers were formed on the whole etched surface. The optical properties of silicon nanostructures were studied. Raman spectra were shifted and broadened relatively to 519.9cm−1 of PS prepared by electrochemical etching, and shifted to 517.2cm−1 for laser-induced etching process and to 508.9cm−1 for electrochemical and laser etching simultaneously. Blue shift luminescence was observed at 649.6nm for PS produced by electrochemical etching, and at 629.5nm for laser-induced etching. PS produced a blue shift at 626.5nm using both etching procedures simultaneously. X-Ray diffraction (XRD) was used to investigate the crystallites size of the PS as well as to provide an estimate of the degree of crystallinty of the etched sample. Springer Science+Business Media, LLC, 2010 Ramizy Asmiet Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut Hassan Z. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut Omar Khalid Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 717-723 0957-4522 22:7<717 2011 22 10854 https://doi.org/10.1007/s10854-010-0199-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0199-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ramizy Asmiet Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut NATIONALLICENCE 700 1- Hassan Z. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut NATIONALLICENCE 700 1- Omar Khalid Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 717-723 0957-4522 22:7<717 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer