caa a22 4500 445827300 CHVBK 20180317145303.0 cr unu---uuuuu 170323e20110701xx s 000 0 eng 10.1007/s10854-010-0216-6 doi (NATIONALLICENCE)springer-10.1007/s10854-010-0216-6 Thickness and mosaic morphology of InAs films grown by LPE supercooling technique [Elektronische Daten] [H. Deng, Q. Wang, J. Wu, S. Hu, X. Chen, N. Dai] InAs films with different thicknesses were fabricated on (100)-oriented InAs substrate by liquid phase epitaxy supercooling technique using the sliding graphite boat. The X-ray diffraction measurement shows that films exhibit (100)-preferred crystal orientation. The film thickness dependence on the growth time and cooling rate was investigated by scanning electron microscope and the growth kinetics was analyzed based on one-dimensional diffusion theory. The experimental data were fitted very well by the supercooling equation, and the fitted diffusion coefficient at 520°C was 6.2×10−5cm2/s. The newly observed mosaic morphology was probably caused by the shake of the growth solution due to sliding the graphite boat. Springer Science+Business Media, LLC, 2010 Deng H. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Wang Q. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Wu J. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Hu S. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Chen X. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Dai N. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 811-814 0957-4522 22:7<811 2011 22 10854 https://doi.org/10.1007/s10854-010-0216-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10854-010-0216-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Deng H. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Wang Q. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Wu J. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Hu S. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Chen X. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 700 1- Dai N. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China aut NATIONALLICENCE 773 0- Journal of Materials Science: Materials in Electronics Springer US; http://www.springer-ny.com 22/7(2011-07-01), 811-814 0957-4522 22:7<811 2011 22 10854 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer